| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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A New Bipolar Type Transistor Created Based on Interface Effects of Integrated All Perovskite Oxides |
| XIA Feng-Jin1,2, WU Hao3, FU Yue-Ju1,4, XU Bo1, YUAN Jie5, ZHU Bei-Yi1, QIU Xiang-Gang1, CAO Li-Xin1, LI Jun-Jie1, JIN Ai-Zi1, WANG Yu-Mei1, LI Fang-Hua1, LIU Bao-Ting4, XIE Zhong2, ZHAO Bai-Ru1** |
1National Laboratory for Superconductivity, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190
2School of Physics and Microelectronic Science, Hunan University, Changsha 410082
3School of Physics and Technology, Wuhan University, Wuhan 430072
4College of Physics Science and Technology, Hebei University, Baoding 071002
5Department of Materials Science, Wuhan University of Science and Technology, Wuhan 430081 |
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| Cite this article: |
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XIA Feng-Jin, WU Hao, FU Yue-Ju et al 2012 Chin. Phys. Lett. 29 107402 |
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Abstract Oxide transistor is the basic device to construct the oxide electronic circuit that is the backing to develop integrated oxide electronics with high efficiency and low power consumption. By growing the perovskite oxide integrated layers and tailoring them to lead semiconducting functions at their interfaces, the development of oxide transistors may be able to perform. We realize a kind of p-i-n type integrated layers consisting of an n-type cuprate superconductor, p-type colossal magnetoresistance manganite, and a ferroelectric barrier (i). From this, bipolar transistors were fabricated at the back-to-back p-i-n junctions, for which the Schottky emission and p-n junction barriers, as well as the ferroelectric polarization, were integrated into the interfaces to control the transport properties; a preliminary but distinct current gain greater than 1.6 at input current of microampers order was observed. These results present a real possibility to date for developing bipolar all perovskite oxide transistors.
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Received: 18 September 2012
Published: 01 October 2012
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