Chin. Phys. Lett.  2012, Vol. 29 Issue (10): 106801    DOI: 10.1088/0256-307X/29/10/106801
CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
GISAXS and ATR-FTIR Studies on Stress-Induced Microstructure Evolution of a-Si:H under H2 Plasma Exposure
ZUO Ze-Wen1, CUI Guang-Lei1, WANG Yu2, WANG Jun-Zhuan2, PU Lin2, SHI Yi2,**
1College of Physics and Electronics Information, Anhui Normal University, Wuhu 241000
2School of Electronic Science and Engineering, and Key Laboratory of Photonic and Electronic Materials, Nanjing University, Nanjing 210093
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ZUO Ze-Wen, CUI Guang-Lei, WANG Yu et al  2012 Chin. Phys. Lett. 29 106801
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Abstract Microstructure evolution in the surface layer of hydrogenated amorphous silicon (a-Si:H) film exposed to H2 plasma is investigated using grazing-incidence small-angle x-ray scattering and attenuated total reflection-Fourier transform infrared spectroscopy. Molecular hydrogen generated in the microvoids through H-abstraction reaction drives the evolution of the void shape from spherical to ellipsoidal as well as increases the average void volume and total void volume fraction. High-pressure H2 in the microvoid promotes the formation of a strained structure with high compressive stress within the a-Si:H film, which favours the generation of the SiHn complex in the subsurface layer of the a-Si:H film by H insertion into strained Si–Si bonds.
Received: 11 June 2012      Published: 01 October 2012
PACS:  68.55.ag (Semiconductors)  
  61.05.cf (X-ray scattering (including small-angle scattering))  
  81.05.Gc (Amorphous semiconductors)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/29/10/106801       OR      https://cpl.iphy.ac.cn/Y2012/V29/I10/106801
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ZUO Ze-Wen
CUI Guang-Lei
WANG Yu
WANG Jun-Zhuan
PU Lin
SHI Yi
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