| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effect of Substrate Temperature on the Structural and Raman Properties of Ag-Doped ZnO Films |
| WANG Li-Na1,2, HU Li-Zhong1,2, ZHANG He-Qiu1,2**, QIU Yu1,2, LANG Ye1,2, LIU Guo-Qiang1,2, QU Guang-Wei1,2, JI Jiu-Yu1,2, MA Jin-Xue1,2 |
1School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024
2The Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian 116024
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| Cite this article: |
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WANG Li-Na, HU Li-Zhong, ZHANG He-Qiu et al 2012 Chin. Phys. Lett. 29 017302 |
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Abstract Ag-doped ZnO (ZnO:Ag) films are prepared on c-plane sapphire substrates by pulsed laser deposition at different substrate temperatures. The effect of substrate temperature on the ZnO:Ag film is studied in detail by EDX, XRD and Raman spectroscopy. The results reveal that raising the substrate temperature is beneficial for incorporating Ag into ZnO:Ag films in the range of our experimental temperatures and a number of Ag atoms incorporation into ZnO:Ag films may cause the (002) peak positions of the XRD spectra shift to a lower angle direction, but hardly affect the c−axis orientation of the films. The (002) peak shift ought to be due to the increase of lattice constant in the c−axis direction caused by the partial substitution of Zn2+ ions by Ag+ ions. In addition, a local vibrational mode (LVM) at 492 cm−1 induced by doping Ag occurred in the Raman spectra of all the ZnO:Ag films and its peak position hardly shifted with increasing substrate temperature. It means that the LVM can act as an indication of Ag incorporation into ZnO:Ag film.
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| Keywords:
73.50.Rb
78.30.Fs
61.43.Dq
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Received: 09 May 2011
Published: 07 February 2012
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| PACS: |
73.50.Rb
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(Acoustoelectric and magnetoacoustic effects)
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78.30.Fs
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(III-V and II-VI semiconductors)
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61.43.Dq
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(Amorphous semiconductors, metals, and alloys)
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