| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Electrical Characteristics of High-Performance ZnO Field-Effect Transistors Prepared by Ultrasonic Spray Pyrolysis Technique |
| YI Ming-Dong1,2**, XIE Ling-Hai1, LIU Yu-Yu1, DAI Yan-Feng2, HUANG Jin-Ying2
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1Key Laboratory for Organic Electronics & Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210046
2State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Graduate School of the Chinese Academy of Sciences, Chinese Academy of Sciences, Changchun 130022
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| Cite this article: |
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YI Ming-Dong, XIE Ling-Hai, LIU Yu-Yu et al 2011 Chin. Phys. Lett. 28 017302 |
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Abstract We have fabricated ZnO-based thin-film transistors (TFTs) by low-cost ultrasonic spray pyrolysis. The devices exhibit high saturation mobility of about 0.6 cm2/Vs and on−off current ratio of 105. The electrical characteristics of ZnO-based TFTs show that ultrasonic spray pyrolysis technique can be used as a promising approach to attain high-performance electronic devices. Furthermore, the deposition techniques make the operating process attractive for flexible electronics.
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| Keywords:
73.40.Lq
73.50.Pz
73.61.Ga
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Received: 08 October 2010
Published: 23 December 2010
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| PACS: |
73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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73.50.Pz
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(Photoconduction and photovoltaic effects)
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73.61.Ga
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(II-VI semiconductors)
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