Chin. Phys. Lett.  2010, Vol. 27 Issue (7): 077401    DOI: 10.1088/0256-307X/27/7/077401
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Film Thickness Dependence of Rectifying Properties of La1.85Sr0.15CuO4/Nb-SrTiO3 Junctions

CHEN Lei-Ming1,2, LI Guang-Cheng1, ZHANG Yan1, GUO Yan-Feng2

1Zhengzhou Institute of Aeronautical Industry Management. Zhengzhou, Henan 450015 2National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190
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CHEN Lei-Ming, LI Guang-Cheng, ZHANG Yan et al  2010 Chin. Phys. Lett. 27 077401
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Abstract

In this work, p-n junctions are made from directly depositing optimal doped La1.85Sr0.15CuO4 (LSCO) films on n-type Nb-doped SrTiO3 substrates. Film thickness controlled rectifying behaviors are strikingly displayed. The starting points of the diffusion voltage reduction Vd-on change clearly with varying film thickness. Vd-on and TC coincide with each other when the film thickness is larger than 300 nm, indicating a close relation between the two parameters. However, when the film is very thin (<350 nm) a departure between the two parameters was also observed. A possible reason for this is discussed within the framework of an inhomogeneous Schottky contact. Enhanced interface inhomogeneity due to the tensile strain appears to be the origin.

Keywords: 74.78.Fk      74.72.-h     
Received: 09 November 2009      Published: 28 June 2010
PACS:  74.78.Fk (Multilayers, superlattices, heterostructures)  
  74.72.-h (Cuprate superconductors)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/27/7/077401       OR      https://cpl.iphy.ac.cn/Y2010/V27/I7/077401
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CHEN Lei-Ming
LI Guang-Cheng
ZHANG Yan
GUO Yan-Feng
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