CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Film Thickness Dependence of Rectifying Properties of La1.85Sr0.15CuO4/Nb-SrTiO3 Junctions |
CHEN Lei-Ming1,2, LI Guang-Cheng1, ZHANG Yan1, GUO Yan-Feng2 |
1Zhengzhou Institute of Aeronautical Industry Management. Zhengzhou, Henan 450015 2National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 |
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Cite this article: |
CHEN Lei-Ming, LI Guang-Cheng, ZHANG Yan et al 2010 Chin. Phys. Lett. 27 077401 |
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Abstract In this work, p-n junctions are made from directly depositing optimal doped La1.85Sr0.15CuO4 (LSCO) films on n-type Nb-doped SrTiO3 substrates. Film thickness controlled rectifying behaviors are strikingly displayed. The starting points of the diffusion voltage reduction Vd-on change clearly with varying film thickness. Vd-on and TC coincide with each other when the film thickness is larger than 300 nm, indicating a close relation between the two parameters. However, when the film is very thin (<350 nm) a departure between the two parameters was also observed. A possible reason for this is discussed within the framework of an inhomogeneous Schottky contact. Enhanced interface inhomogeneity due to the tensile strain appears to be the origin.
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Keywords:
74.78.Fk
74.72.-h
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Received: 09 November 2009
Published: 28 June 2010
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PACS: |
74.78.Fk
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(Multilayers, superlattices, heterostructures)
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74.72.-h
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(Cuprate superconductors)
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[1] Hasegawa H, T Fukazawa and Aida T 1989 Japn. J. Appl. Phys. 28 L2210 [2] Yoshida A, Tamura H 1991 J. Appl. Phys. 70 4976 [3] Suzuki S and Yamamoto T 1997 J. Appl. Phys. 81 6830 [4] Muraoka Y and Muramatsu T 2004 Appl. Phys. Lett. 85 2950 [5] Liu Z and Zhu Y B 2005 Supercond. Sci. Technol. 18 438 [6] Ramadan W, Ogale S B et al 2005 Phys. Rev. B 72 205333 [7] Sun J R, Xiong C M et al 2005 Appl. Phys. Lett. 87 222501 [8] Xiang X Q, Qu J F et al 2007 Appl. Phys. Lett. 90 132513 [9] Guo Y F, Chen L M et al 2007 J. Phys. D: Appl. Phys. 40 4578 [10] Zhang H J, Zhang X P et al 2009 Appl. Phys. Lett. 94 092111 [11] Guo Y F, Guo X et al 2009 Appl. Phys. Lett. 94 143506 [12] Kao H L, Kwo J et al 1991 Appl. Phys. Lett. 59 2748 [13] Guo Y F, Chen L M et al 2006 Physica C 450 96 [14] Guo Y F, Chen L M et al 2007 Physica C 453 64 [15] Cieplak M Z, Berkowski M et al 1994 Appl. Phys. Lett. 65 3383 [16] Pan S, Ng K W et al 1987 Phys. Rev. B 35 7220 [17] Sze S M 1981 Physics of Semiconductor Devices 2nd edn (New York: Wiley) chap 2 p 84 [18] Werner J H and Güttler H H 1991 J. Appl. Phys. 69 1522 [19] Card C and Rhodreick E H 1971 J. Phys. D 4 1589 [20] Dharmadasa I M, Roberts G G et al 1982 J. Phys. D 15 901 [21] Tung R T 1991 Appl. Phys. Lett. 58 2821 [22] Shi J P, Zhao YG et al 2008 Appl. Phys. Lett. 92 132501
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