CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Strain Effects on Electronic Properties of Boron Nitride Nanoribbons |
LI Jin, SUN Li-Zhong, ZHONG Jian-Xin |
Laboratory for Quantum Engineering and Micro-Nano Energy Technology, Xiangtan University, Xiangtan 411105 Department of Physics, Xiangtan University, Xiangtan 411105 |
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Cite this article: |
LI Jin, SUN Li-Zhong, ZHONG Jian-Xin 2010 Chin. Phys. Lett. 27 077101 |
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Abstract We investigate the strain effects on the electronic properties of boron nitride nanoribbons (BNNRs) by using first-principles calculations. The results show that the energy gap of BNNRs with both armchair edges (A-BNNRs) and zigzag edges (Z-BNNRs) decreases as the strain increases. As strain increases, the energy gaps of Z-BNNRs decrease rapidly as the width increases and reduce significantly to small values, which makes Z-BNNRs change from wide-gap to narrow-gap semiconductors.
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Keywords:
71.15.Mb
73.22.-f
62.23.Kn
68.60.Bs
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Received: 01 March 2010
Published: 28 June 2010
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PACS: |
71.15.Mb
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(Density functional theory, local density approximation, gradient and other corrections)
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73.22.-f
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(Electronic structure of nanoscale materials and related systems)
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62.23.Kn
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(Nanosheets)
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68.60.Bs
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(Mechanical and acoustical properties)
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