CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Simulation of Voltage SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling |
GONG Yue-Feng, SONG Zhi-Tang, LING Yun, LIU Yan, LI Yi-Jin |
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 |
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Cite this article: |
GONG Yue-Feng, SONG Zhi-Tang, LING Yun et al 2010 Chin. Phys. Lett. 27 068501 |
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Abstract A three-dimensional finite element model for phase change random access memory is established to simulate electric, thermal and phase state distribution during (SET) operation. The model is applied to simulate the SET behaviors of the heater addition structure (HS) and the ring-type contact in the bottom electrode (RIB) structure. The simulation results indicate that the small bottom electrode contactor (BEC) is beneficial for heat efficiency and reliability in the HS cell, and the bottom electrode contactor with size Fx =80 nm is a good choice for the RIB cell. Also shown is that the appropriate SET pulse time is 100 ns for the low power consumption and fast operation.
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Keywords:
85.50.-n
65.60.+a
73.61.Jc
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Received: 01 February 2010
Published: 25 May 2010
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PACS: |
85.50.-n
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(Dielectric, ferroelectric, and piezoelectric devices)
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65.60.+a
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(Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.)
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73.61.Jc
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(Amorphous semiconductors; glasses)
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