| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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The Anomalous Effect of Interface Traps on Generation Current in Lightly Doped Drain nMOSFET's
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MA Xiao-Hua1,2, GAO Hai-Xia2, CAO Yan-Rong3, CHEN Hai-Feng2, HAO Yue2
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| 1School of Technical Physics, Xidian University, Xi'an 710071 2Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071 3School of Mechano-electric Engineering, Xidian University, Xi'an 710071 |
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| Cite this article: |
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MA Xiao-Hua, GAO Hai-Xia, CAO Yan-Rong et al 2010 Chin. Phys. Lett. 27 057301 |
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Abstract The anomalous phenomenon of generation current IGD in the lightly doped drain (LDD) nMOSFET measured under the drain bias VD-step mode is reported. We propose an assumption of activated (A) and frozen (F) traps for the VD-step mode: The A traps contributes to IGD while the F process can make them lose the roles as generation centers. The A and F regions can form the F-A region. The comparison of the F and A regions decides the role of the F-A region. The experiments confirm the assumption.
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| Keywords:
73.40.Qv
85.30.Tv
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Received: 27 January 2010
Published: 23 April 2010
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| PACS: |
73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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85.30.Tv
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(Field effect devices)
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