| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
|
|
|
|
Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure |
JI Lian1, ZHANG Shu-Ming1, JIANG De-Sheng1, LIU Zong-Shun1, ZHANG Li-Qun1, ZHU Jian-Jun1, ZHAO De-Gang1, DUAN Li-Hong1, YANG Hui1,2
|
| 1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO BOX 912, Beijing 100083 2Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 |
|
| Cite this article: |
|
JI Lian, ZHANG Shu-Ming, JIANG De-Sheng et al 2010 Chin. Phys. Lett. 27 054204 |
|
|
|
Abstract InGaN/GaN multi-quantum-well-structure
laser diodes with an array structure are successfully fabricated on
sapphire substrates. The laser diode consists of four emitter stripes
which share common electrodes on one laser chip. An 800-μm-long cavity
is formed by cleaving the substrate along the  orientation using laser scriber. The threshold current and voltage of the
laser array diode are 2A and 10.5V, respectively. A light output peak
power of 12W under pulsed current injection at room temperature is
achieved. We simulate the electric properties of GaN based laser diode in
a co-planar structure and the results show that minimizing the difference
of distances between the different ridges and the n-electrode and
increasing the electrical conductivity of the n-type GaN are two effective
ways to improve the uniformity of carrier distribution in emitter stripes.
Two pairs of emitters on a chip are arranged to be located near the two
n-electrode pads on the left and right sides, and the four stripe emitters
can laser together. The laser diode shows two sharp peaks of light output
at 408 and 409nm above the threshold current. The full widths at half
maximum for the parallel and perpendicular far field patterns are
8° and 32°, respectively.
|
| Keywords:
42.55.Px
42.82.Et
78.45.+h
|
|
|
Received: 20 October 2009
Published: 23 April 2010
|
|
| PACS: |
42.55.Px
|
(Semiconductor lasers; laser diodes)
|
| |
42.82.Et
|
(Waveguides, couplers, and arrays)
|
| |
78.45.+h
|
(Stimulated emission)
|
|
|
|
|
|
[1] Nakamura S et al 1996 Jpn. J. Appl. Phys. 35 74
[2] Nakamura S et al 1996 Appl. Phys. Lett. 69 4056
[3] Nakamura S et al 1998 J. Cryst. Growth 189/190 820
[4] Nagahama S I et al 2000 Jpn. J. Appl. Phys. Ⅱ 39 L647
[5] Miyoshi T et al 2008 Proc. SPIE 6894 689414
[6] Goto S, TojyoT, Ansai S, Yabuki Y et al 2001 28th Int. Symp. Compound Semiconduct. 177
[7] Goto S et al 2003 Phys. Status Solidi A 200 122
[8] Swietlik T et al 2007 J. Appl. Phys. 101 083109
[9] Holc K et al 2009 Proc. SPIE 7216 721618
[10] Kehl Sink R 2000 Ph.D. Dissertation of University of California (Santa Barbara)
[11] Li D Y et al 2006 J. Appl. Phys. 100 046101
[12] Dennemarck J et al 2007 Phys. Status Solidi C 4 78
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
