| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Highly Efficient Simplified Organic Light-Emitting Diodes Utilizing F4-TCNQ as an Anode Buffer Layer |
| DONG Mu-Sen1,2,3, WU Xiao-Ming1,2,3, HUA Yu-Lin1,2,3**, QI Qing-Jin1,2,3, YIN Shou-Gen1,2,3
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1School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384
2Key Laboratory of Display Materials and Photoelectric devices (Ministry of Education), Tianjin 300384
3Tianjin Key Laboratory of Photoelectric Materials and devices, Tianjin 300384
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| Cite this article: |
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DONG Mu-Sen, WU Xiao-Ming, HUA Yu-Lin et al 2010 Chin. Phys. Lett. 27 127802 |
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Abstract We demonstrate that the electroluminescent performances of organic light-emitting diodes (OLEDs) are significantly improved by evaporating a thin F4-TCNQ film as an anode buffer layer on the ITO anode. The optimum Alq3−based OLEDs with F4-TCNQ buffer layer exhibit a lower turn-on voltage of 2.6 V, a higher brightness of 39820 cd/m2 at 13 V, and a higher current efficiency of 5.96 cd/A at 6 V, which are obviously superior to those of the conventional device (turn−on voltage of 4.1 V, brightness of 18230 cd/m2 at 13 V, and maximum current efficiency of 2.74 cd/A at 10 V). Furthermore, the buffered devices with F4−TCNQ as the buffer layer could not only increase the efficiency but also simplify the fabrication process compared with the p-doped devices in which F4-TCNQ is doped into β-NPB as p-HTL (3.11 cd/A at 7 V). The reason why the current efficiency of the p-doped devices is lower than that of the buffered devices is analyzed based on the concept of doping, the measurement of absorption and photoluminescence spectra of the organic materials, and the current density-voltage characteristics of the corresponding hole-only devices.
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| Keywords:
78.60.Fi
85.60.Jb
78.55.-m
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Received: 16 July 2010
Published: 23 November 2010
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| PACS: |
78.60.Fi
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(Electroluminescence)
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85.60.Jb
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(Light-emitting devices)
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78.55.-m
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(Photoluminescence, properties and materials)
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