| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
|
|
|
|
Pseudo-Rhombus-Shaped Subwavelength Crossed Gratings of GaAs for Broadband Antireflection |
| CHEN Xi1**, FAN Zhong-Chao2, ZHANG Jing1, SONG Guo-Feng1, CHEN Liang-Hui1 |
1Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
|
|
| Cite this article: |
|
CHEN Xi, FAN Zhong-Chao, ZHANG Jing et al 2010 Chin. Phys. Lett. 27 124210 |
|
|
|
|
Abstract Holographic lithography coupled with the nonlinear response of photoresist to the exposure is adopted to fabricate porous photoresist (PR) mask. Conventional dot PR mask is also generated, and both patterns are transferred into a underlying GaAs substrate by the optimal dry etching process to obtain tapered subwavelength crossed gratings (SWCGs) to mimic the moth-eye structure. In comparison of the experiment and simulation, the closely-packed pseudo-rhombus-shaped GaAs SWCGs resulting from the porous mask outperforms the conical counterpart which comes from the dot mask, and achieves a reported lowest mean spectral reflectance of 1.1%.
|
| Keywords:
42.25.Bs
42.40.Eq
42.82.Cr
|
|
|
Received: 19 September 2010
Published: 23 November 2010
|
|
| PACS: |
42.25.Bs
|
(Wave propagation, transmission and absorption)
|
| |
42.40.Eq
|
(Holographic optical elements; holographic gratings)
|
| |
42.82.Cr
|
(Fabrication techniques; lithography, pattern transfer)
|
|
|
|
|
|
[1] Wu M, Huang Y and Ho C 2007 IEEE Electron. Devices Lett. 28 2309
[2] Algora C, Ortiz E, Stolle I, Diaz V, Pena R, Andreev V M, Khvostikov V P and Rumyantsev V D 2001 IEEE Trans. Electron. Devices 48 840
[3] Lalanne P and Morris G M 1997 Nanotechnology 8 53
[4] Boden S A and Bagnall D M 2008 Appl. Phys. Lett. 93 133108
[5] Min W L, Betancout A P, Jiang P and Jiang B 2008 Appl. Phys. Lett. 92 141109
[6] Clapham P B and Hutley M C 1973 Nature 244 281
[7] Kanamori Y, Sasaki M and Hane K 1999 Opt. Lett. 24 1422
[8] Chen Q, Hubbard G, Shields P A, Liu C, Allsopp D, Wang W N and Abbort S 2009 Appl. Phys. Lett. 94 263118
[9] Hadobas K, Kirsch S, Carl A, Acet M and Wassermann E F 2000 Nanotechnology 11 161
[10] Song Y M, Yu J S and Lee Y T 2010 Opt. Lett. 35 276
[11] Song Y M, Bae S Y, Yu J S and Lee Y T 2009 Opt. Lett. 34 1702
[12] Brueck S R J 2005 Proc. IEEE 93 1704
[13] Mack C A 1988 Appl. Opt. 27 4913
[14] Song Y M, Jang S J, Yu J S and Lee Y T 2010 Small 6 984
[15] Moharam M G, Pommet D A, Grann E B and Gaylord T K 1995 J. Opt. Soc. Am. A 12 1077
[16] Chen X, Zhong Y, Wang Q, Zhang Y J and Chen L H 2010 Chin. Phys. B 19 104101
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
