| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Ultrasensitive Detection of Infrared Photon Using Microcantilever: Theoretical Analysis |
| CAO Li-Xin1, ZHANG Feng-Xin2,3, ZHU Yin-Fang2,3, YANG Jin-Ling2,3 |
1National Laboratory for Superconductivity, Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190
2Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
3State Key Laboratory of Transducer Technology, Beijing 100080
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| Cite this article: |
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CAO Li-Xin, ZHANG Feng-Xin, ZHU Yin-Fang et al 2010 Chin. Phys. Lett. 27 108501 |
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Abstract We present a new method for detecting near-infrared, mid-infrared, and far-infrared photons with an ultra-high sensitivity. The infrared photon detection was carried out by monitoring the displacement change of a vibrating microcantilever under light pressure using a laser Doppler vibrometer. Ultrathin silicon cantilevers with high sensitivity were produced using micro/nano-fabrication technology. The photon detection system was set up. The response of the microcantilever to the photon illumination is theoretically estimated, and a nanowatt resolution for the infrared photon detection is expected at room temperature with this method.
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| Keywords:
85.60.Gz
42.50.Wk
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Received: 04 May 2010
Published: 26 September 2010
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| PACS: |
85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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42.50.Wk
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(Mechanical effects of light on material media, microstructures and particles)
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85.85.+j
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(Micro- and nano-electromechanical systems (MEMS/NEMS) and devices)
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[1] Liu Y, Wu Q L, Han Z F, Dai Y M and Guo G C 2006 Chin. Phys. Lett. 23 252
[2] Zappa F, Lacaita A L, Cova S D and Lovati P 1996 Opt. Eng. 35 938
[3] Korneev A, Kouminov P, Matvienko V, Chulkova G, Smirnov K, Voronov B, Gol'tsman G N, Currie M, Lo W, Wilsher K, Zhang J, Slysz W, Pearlman A, Verevkin A and Sobolewski R 2004 Appl. Phys. Lett. 84 5338
[4] Tian Z B, Gu Y, Wang K and Zhang Y G 2008 Chin. Phys. Lett. 25 2292
[5] Komiyama S, Astafiev O, Antonov V, Kutsuwa T and Hiral H 2000 Nature 403 405
[6] Kardynal B E, Hees S S and Shields A J 2007 Appl. Phys. Lett. 90 181114
[7] Kong N, Liu J Q, Li L, Liu F Q, Wang L J and Wang Z G 2010 Chin. Phys. Lett. 27 038501
[8] Razeghi M 2010 Technology of Quantum Devices (New York: Springer)
[9] Lai J, Perazzo T, Shi Z and Majumdar A 1997 Sensors and Actuators A 58 113
[10] Datskos P G, Rajic S and Datskou I 2000 Ultramicroscopy 82 49
[11] Marti O, Ruf A, Hipp M, Bielefeldt H, Colchero J and Mlynek J 1992 Ultramicroscopy 42-44 345
[12] Rugar D, Stipe B C, Mamin H J, Yannoni C S, Stowe T D, Yasumura K Y and Kenny T W 2001 Appl. Phys. A (Suppl.) 72 S3
[13] http://www.virginiasemi.com/pdf/Optical\%20Properties- \%20of\%20Silicon71502.pdf
[14] Albrecht T R, Grütter P, Horne D and Rugar D 1991 J. Appl. Phys. 69 668
[15] Yang J L, Ono T and Esashi M 2000 Sensors and Actuators A 82 102
[16] Nguyen C T C 1994 PhD Dissertation (Berkeley: University of California)
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