| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Capping-Barrier Layer Effect on Quantum Dot Optoelectronic Characteristics |
| A. Rostami1,2**, H. Rasooli Saghai2, H. Baghban1,2, N. Sadoogi1, Y. Seyfinejad3 |
1Photonic and Nanocrystal Research Lab (PNRL), Faculty of Electrical and Computer Engineering, University of Tabriz, Tabriz 51664, Iran
2School of Engineering Emerging Technologies, University of Tabriz, Tabriz 51664, Iran
3Department of Electrical Engineering, Islamic Azad University, Tabriz Branch, Sardrud Center Tabriz, Iran
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| Cite this article: |
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A. Rostami, H. Rasooli Saghai, H. Baghban et al 2010 Chin. Phys. Lett. 27 104208 |
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Abstract We present a study of capping-barrier layer (CBL) effect on electro-optical properties of box- and spherical-shaped quantum dots as well as of the electronic transport of a QDs-array. It is shown that increasing the CBL-width leads to a considerable enhancement in third-order optical nonlinear susceptibilities (14 times in the quadratic electro-optic effect, 31 times for ω=ω0/3 and 14 times for ω=ω0 in the third harmonic generation). The capping-barrier layer thus can be employed as a degree of freedom in engineering the electro-optical specifications of quantum-dot-based devices.
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81.07.Ta
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Received: 24 December 2009
Published: 26 September 2010
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