| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effect of Sputtering Parameters on Film Composition, Crystal Structure, and Coercivity of SmCo Based Films Deposited on Si (100) Substrates |
| XUE Gang, PENG Long, ZHANG Huai-Wu |
| State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 |
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| Cite this article: |
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XUE Gang, PENG Long, ZHANG Huai-Wu 2010 Chin. Phys. Lett. 27 017501 |
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Abstract The sputtering parameter mediated composition (SPMC) effect of 3.0-μm-thick SmCo-based films is experimentally and theoretically studied. The experimental results give a clear indication that the Sm concentration increases with the decreasing sputtering power or with the increasing Ar gas pressure, which are in agreement with the calculated values when the
preferential sputtering effect is disregarded. The SPMC effect provides an opportunity for the same composite target to fabricate films with an Sm concentration varying from 13.8at.% to 17.3at.%, which is reasonable for the magnetic phase transformation (Sm2Co17→SmCo7→SmCo5) and the enhanced coercivity.
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| Keywords:
75.50.Ww
81.15.Cd
75.70.Ak
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Received: 05 August 2009
Published: 30 December 2009
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| PACS: |
75.50.Ww
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(Permanent magnets)
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81.15.Cd
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(Deposition by sputtering)
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75.70.Ak
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(Magnetic properties of monolayers and thin films)
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