| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effect of Different Substrate Temperature on Sb-Doped ZnO Thin Films Prepared by Pulsed Laser Deposition on Sapphire Substrates |
| ZHAO Zi-Wen1,2, HU Li-Zhong1,2, ZHANG He-Qiu1,2, SUN Jing-Chang1,2, BIAN Ji-Ming1,2, SUN Kai-Tong1,2, CHEN Xi1,2, ZHAO Jian-Ze1,2, LI Xue1,2, ZHU Jin-Xia1,2 |
| 1School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 1160242The Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian 116024 |
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| Cite this article: |
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ZHAO Zi-Wen, HU Li-Zhong, ZHANG He-Qiu et al 2010 Chin. Phys. Lett. 27 017301 |
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Abstract Sb-doped ZnO thin films are deposited on c-plane sapphire substrates by pulsed laser deposition. Hall results indicate that the conductivity of the Sb-doped ZnO thin films is strongly dependent on the substrate temperature. The sample deposited at the temperature of 550°C exhibits p-type conductivity. It gives a resistivity of 15.25Ω・cm, with a Hall mobility of 1.79cm2V-1s-1 and a carrier concentration of 2.290×1017cm-3 at room temperature. The x-ray diffraction indicates that the Sb-doped ZnO thin films deposited in the range of 450-650°C are high c-axis oriented. Low-temperature photoluminescence spectra indicate that the sample deposited at 550°C shows the strong acceptor-bound exciton (A0X) emission.
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| Keywords:
73.90.+f
78.55.Et
81.15.Fg
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Received: 15 May 2009
Published: 30 December 2009
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| PACS: |
73.90.+f
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(Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)
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78.55.Et
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(II-VI semiconductors)
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81.15.Fg
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(Pulsed laser ablation deposition)
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