| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effects of Different Plasma Energy Treatments on n-Type Al0.4Ga0.6N Material |
| YANG Ling, HAO Yue, ZHOU Xiao-Wei, MA Xiao-Hua |
| Key Laboratory of Wide Band Gap Semiconductor Material and Device, Institute of Microelectronics, Xidian University, Xi'an 710071 |
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| Cite this article: |
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YANG Ling, HAO Yue, ZHOU Xiao-Wei et al 2009 Chin. Phys. Lett. 26 077105 |
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Abstract Electronic properties, surface chemistry and surface morphology of plasma-treated n-Al0.4Ga0.6N material are studied by electrical contact measurements, atomic force microscopy and x-ray photoemission spectroscopy. Although excessive etching can cause the surface roughness to significantly increase, the nitrogen vacancies VN produced by the excessive etching can be compensated for by the negative effects of the rougher surface. Thus, VN produced by excessive etching plays a key role in Ohmic contact of high-Al content AlGaN and it can reduce Ohmic contact resistance. The effect of rapid thermal annealing on the performance of n-Al0.4Ga0.6N can significantly reduce the etching damage caused by excessive etching.
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| Keywords:
71.55.Eq
71.55.Ak
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Received: 17 February 2009
Published: 02 July 2009
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