CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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A Peak in Density Dependence of Electron Spin Relaxation Time in n-Type Bulk GaAs in the Metallic Regime |
SHEN Ka |
Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026Department of Physics, University of Science and Technology of China, Hefei 230026 |
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Cite this article: |
SHEN Ka 2009 Chin. Phys. Lett. 26 067201 |
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Abstract We demonstrate that the peak in the density dependence of electron spin relaxation time in n-type bulk GaAs in the metallic regime predicted by Jiang and Wu [Phys.Rev.B 79(2009)125206] has been realized experimentally in the latest work [arXiv:0902.0270] by Krauβ, et al.
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Keywords:
72.55.Rb
72.25.Fe
71.70.Ej
78.20.Nv
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Received: 27 April 2009
Published: 01 June 2009
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[1] Awschalom D D, Loss D and Samarth N 2002 Semiconductor Spintronics and Quantum Computation (Berlin:Springer) \u{Zuti\'c I, Fabian J and Sarma S D 2004 Rev. Mod.Phys. 76 323 [2] Dzhioev R I, Korenev V L, Merkulov I A, Zakharchenya BP, Gammon D, Efros AI L and Katzer D S 2002 Phys. Rev.Lett. 88 256801 [3] Dzhioev R I, Zakharchenya B P, Korenev V L, and StepanovaM N 1997 Phys. Solid State 39 1765 [4] Dzhioev R I, Kavokin K V, Korenev V L, Lararev M V,Meltser B Ya, Stepanova M N, Zakharchenya B P, Gammon D and KatzerD S 2002 Phys. Rev. B 66 245204 [5] Kikkawa J M and Awschalom D D 1998 Phys. Rev. Lett. 80 4313 [6] Furis M, Smith D L, Crooker S A and Reno J L 2006 Appl. Phys. Lett. 89 102102 [7] Shklovskii B I and Efros A L 1984 ElectronicProperties of Doped Semiconductors (Berlin: Springer) [8] D'yakonov M I and Perel' V I 1971 Zh. \'Eksp. Teor.Fiz. 60 1954 [1971 Sov. Phys. JETP 33 1053] D'yakonov M I and Perel' V I 1971 Fiz. Tverd. Tela(Leningrad) 13 3581 [1972 Sov. Phys. Solid State 13 3023] [9] Jiang J H and Wu M W 2009 Phys. Rev. B 79125206 [10] Jiang J H, Zhou Y, Korn T, Sch\"uller C and Wu M W 2009 Phys. Rev. B 79 155201 [11] Zhou J and Wu M W 2008 Phys. Rev. B 77075318 [12] Weng M Q and Wu M W 2003 Phys. Rev. B 68075312 Weng M Q, Wu M W and Jiang L 2004 Phys. Rev. B 69 245320 [13] Wu M W and Ning C Z 2000 Eur. Phys. J. B 18373 Wu M W and Metiu H 2000 Phys. Rev. B 61 2945 Wu M W 2001 J. Phys. Soc. Jpn. 70 2195 [14] Zhou J, Cheng J L and Wu M W 2007 Phys. Rev. B 75 045305 [15] Krau{\ss M, Bratschitsch R, Chen Z, Cundiff S T andSchneider H C arXiv:0902.0270 [16] Bronold F X, Saxena A and Smith D L 2004 Phys. Rev.B 70 245210 [17] Haug H and Jauho A P 1996 Quantum Kinetics inTransport and Optics of Semiconductors (Berlin: Springer) [18] Dresshaus G 1995 Phys. Rev. 100 580 [19] Hilton D J and Tang C L 2002 Phys. Rev. Lett. 89 146601 [20] Krau{\ss M, Aeschlimann M and Schneider H C 2008 Phys. Rev. Lett. 100 256601 [21] Jancu J M, Scholz R, de Andrada e Silva E A and LaRocca G C 2005 Phys. Rev. B 72 193201 [22] Glazov M M and Ivchenko E L 2002 Pis'ma Zh. \'Eksp.Teor. Fiz. 75 476 [2002 JETP Lett. 75 403] [23] Leyland W J, John G H, Harley R T, Glazov M M, Ivchenko EL, Ritchie D A, Farrer I, Shields A J and Henini M 2007 Phys.Rev. B 75 165309 [24] Harley R T 2008 in Spin Physics in Semiconductored D'yakonov M I (Berlin: Springer) |
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