| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
|
|
|
|
Thermal Analysis of InAs/AlSb Short Wavelength Mid-IR Quantum Cascade Lasers |
| WEI Lin, LI Ai-Zhen, XU Gang-Yi |
| State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 |
|
| Cite this article: |
|
WEI Lin, LI Ai-Zhen, XU Gang-Yi 2009 Chin. Phys. Lett. 26 064207 |
|
|
|
|
Abstract We present the effects of hetero-interfaces and major key parameters on the thermal behaviors and performance of short wavelength mid-IR InAs/AlSb quantum cascade lasers (QCLs). We use a finite element method (FEM) with commercial software, ANSYS, to simulate the heat dissipation in QCLs in cw operation mode with an epilayer-down mounting package. The thermal performance is characterized by the temperature increase Δ T (self-heating effect) between the active region of QCLs and the heatsink. Results show that (1) the self-heating effects of InAs/AlSb QCLs are much less than those in AlInAs/GaInAs QCLs, (2) narrower ridges lead to significantly cooler active regions of InAs/AlSb QCLs due to poor heat transport in the cross-plane direction (across interfaces) and that most of the heat flows out of the active region in the lateral direction, and (3) the cavity length of the laser has little influence on the self-heating effect of the device, but the long cavity reduces mirror loss and threshold current density.
|
| Keywords:
42.55.Px
81.05.Ea
81.15.Hi
|
|
|
Received: 22 October 2008
Published: 01 June 2009
|
|
| PACS: |
42.55.Px
|
(Semiconductor lasers; laser diodes)
|
| |
81.05.Ea
|
(III-V semiconductors)
|
| |
81.15.Hi
|
(Molecular, atomic, ion, and chemical beam epitaxy)
|
|
|
|
|
|
[1] Vurgaftman I, Meyer J R, Julien F H and Ram-Mohan L R 1998 Appl. Phys. Lett. 73 711
[2] Yu J S, Darvish S R, Evans A, Nguyen J, Slivken S andRazeghi M 2006 Appl. Phys. Lett. 88 041111
[3] Teissier R, Barate D, Baranov A N, Alibert C, Baranov A N,Marcadet X, Renard C, Garcia M, Sirtori C, Revin D and Cockburn J2004 Appl. Phys. Lett. 85 167
[4] Devenson J, Barate D, Cathabard O, Teissier R and BaranovA N 2006 Appl. Phys. Lett. 89 191115
[5] Ohtani K, Ohnishi H and Ohno H 2008 Appl. Phys.Lett. 92 041102
[6] Gmachl C, Sergent A M, Tredicucci A, Capasso F, HutchinsonA L, Sivco D L, Baillargeon J N, Chu S N G and Cho A Y 1999 IEEE Photon. Technol. Lett. 11 1369
[7] Spagnolo V, Scamarcio G, Marano D, Troccoli M, Capasso F,Gmachl C, Sergent A M, Hutchinson A L, Sivco D L, Cho A Y, Page H,Becker C and Sirtori C 2003 IEE Proc.Optoelectron. 150298
[8] Zhu C, Zhang Y G, Li A Z and Tian Z B 2006 J. Appl.Phys. 100 053105
[9] Swartz E T and Pohl R O 1989 Rev. Mod. Phys. 61 605
[10] Swartz E T and Pohl R O 1987 Appl. Phys. Lett. 51 2200
[11] Filippov K A and Balandin A A 2003 MRS Internet J.Nitride Semicond. Res. 8 4
[12] Lops A, Spagnolo V and Scamarcio G 2006 J. Appl.Phys. 100 043109
[13] Spagnolo V, Lops A, Scamarcio G, Vitiello M S and FrancoC D 2008 J. Appl. Phys. 103 043103
[14] Levinshtein M, Rumvantsev S and Shur M 1999 HandbookSeries on Semiconductor Parameters (Singapore: World Scientific)vols 1 and 2
[15] Vurgaftman I, Meyer J R and Ram-Mohan L R 2001 J.Appl. Phys. 89 5815 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
