| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Fabrication of Co/CoO Exchange Bias System by Ion Implantation and Its Magnetic Properties |
| FA Tao, XIANG Qing-Pei, YAO Shu-De |
| State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871 |
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| Cite this article: |
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FA Tao, XIANG Qing-Pei, YAO Shu-De 2009 Chin. Phys. Lett. 26 126101 |
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Abstract We use ion implantation as a new approach to build an anti-ferromagnetic (AFM) cluster embedded exchange bias (EB) system. Co film with thickness of 130nm is deposited on the Si (111) substrate using magnetron sputtering, 60keV O+ is chosen to implanted into the Co film to form CoO AFM clusters coupling with Co matrix at the interface. By measuring the hysteresis loop after field-cooling, significant shifts of loop along the applied field are confirmed. When increasing the implantation dose to 2×1017/cm2 and annealed samples in N2 atmosphere, we obtain the highest HEB to 458Oe.
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| Keywords:
61.72.U-
75.30.Et
75.70.Cn
75.75.+a
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Received: 11 September 2009
Published: 27 November 2009
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| PACS: |
61.72.U-
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(Doping and impurity implantation)
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75.30.Et
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(Exchange and superexchange interactions)
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75.70.Cn
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(Magnetic properties of interfaces (multilayers, superlattices, heterostructures))
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75.75.+a
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