| PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES |
|
|
|
|
Simulation of Dual Frequency Capacitive Sheath over a Concave Electrode in Low Pressure |
| HAO Mei-Lan, DAI Zhong-Ling, WANG You-Nian |
| School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116023 |
|
| Cite this article: |
|
HAO Mei-Lan, DAI Zhong-Ling, WANG You-Nian 2009 Chin. Phys. Lett. 26 125202 |
|
|
|
|
Abstract A self-consistent two-dimensional (2D) collisionless fluid model is developed to simulate the characteristics of a dual frequency capacitive sheath over an electrode with a cylindrical hole. The model consists of 2D time-dependent fluid equations coupled with Poisson's equation, in which the low-frequency (LF) and high-frequency current sources are applied to an electrode. Thus, the so-called equivalent circuit model coupling with the fluid equations will be able to self-consistently determine the relationship between the instantaneous voltage on the powered electrode and the sheath thickness. The time-averaged potential, electric field, ion density in the sheath and ion energy distributions at the bottom of the hole are calculated and compared for different LF frequencies. The results show that the LF frequency is crucial for determining the sheath structure. The existence of the cylindrical hole on the electrode obviously affects the sheath profile in the parallel to the electrode and makes the sheath profile tend to adapt the contours of the electrode, which is the plasma molding effect.
|
| Keywords:
52.65.Kj
52.77.Bn
52.40.Kh
|
|
|
Received: 01 July 2009
Published: 27 November 2009
|
|
|
|
|
|
|
|
[1] Lieberman M A and Lichtenberg A J 2005 Principles ofPlasma Discharges and Materials Processing 2nd edn (New York:Wiley)
[2]Goto H H, Lowe H-D and Ohmi T 1993 IEEE Trans.Semicond. Manuf. 6 58
[3]Goto H H, Lowe H-D and Ohmi T 1992 J. Vac. Sci.Technol. A 10 3048
[4]Boyle P C, Robiche J and Turner M M 2004 J. Phys. D:Appl. Phys. 37 1451
[5]Chen F F 1990 Plasma Physics and Controlled Fusion(New York: Plenum)
[6]Dai Z L, Xu X and Wang Y N 2007 Phys. Plasma 14013507
[7]Wang L H, Dai Z L and Wang Y N 2006 Chin. Phys. Lett. 23 668
[8]Dai Z L, Liu C S and Wang Y N 2008 Chin. Phys. Lett. 25 632
[9]Jiang W, Mao M and Wang Y N 2006 Phys. Plasma 13 113502
[10]Kim D and Economou D J 2002 IEEE Trans. Plasma Sci. 30 2048
[11]Kim D and Economou D J 2003 J. Appl. Phys. 942852
[12]Hou L J and Wang Y N 2004 Phys. Plasma 11 4456
[13]Hamaoka F et al 2007 IEEE Trans. Plasma Sci. 35 1350
[14]Dai Z L et al 2009 Plasma Sci. and Technol. 11283
[15]Liberman M A 2000 IEEE Trans. Plasma Sci. 16638
[16]Liberman M A 1989 IEEE Trans. Plasma Sci. 17338
[17]Edelberg E A and Aydil E S 1999 J. Appl. Phys. 86 4799
[18]Hou L J et al 2004 Plasma Sci. and Technol. 62404
[19]Boris J P, Landsberg A M, Oran E S and Gardner J H 1993 Naval Research Laboratory Memorandum Report No 6410-93-7192
[20]Zalesak S T 1979 J. Comput. Phys. 31 335
[21]Boris J P and Book D L 1973 J. Comput. Phys. 11 38
[22]Kim H C and Manousiouthakis V I 1998 J. Vac. Sci.Technol. A 16 2162
[23]Ahn T H et al 1996 Plasma Sources Sci. Technol. 5 139
[24]Guan Z Q, Dai Z L, and Wang Y N 2005 Phys. Plasma 12 123502 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
