Measurement of the Carrier Recovery Time in Semiconductor Optical Amplifier Based on Dual-Pump Four-Wave Mixing Technology

doi:10.1088/0256-307X/26/12/124208

Chin. Phys. Lett.

2009, Vol. 26

Issue (12): 124208 DOI: 10.1088/0256-307X/26/12/124208

FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS)

Measurement of the Carrier Recovery Time in Semiconductor Optical Amplifier Based on Dual-Pump Four-Wave Mixing Technology

CHENG Cheng, ZHANG Xin-Liang, ZHANG Yu, ZHOU En-Bo, LIU Lei, ZHANG
Yin, HUANG De-Xiu

Wuhan National Laboratory for Optoelectronics and School of Optoelectronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074

Cite this article:

CHENG Cheng, ZHANG Xin-Liang, ZHANG Yu et al 2009 Chin. Phys. Lett. 26 124208

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Abstract A scheme of measuring the carrier recovery time in semiconductor optical amplifiers (SOAs) based on dual pump Four-wave mixing technology is presented. The carrier recovery times under 120mA, 180mA 240mA and 300mA injected currents are measured to be 111ps, 81ps, 71ps and 53ps, respectively. The carrier recovery time of the spacing between the two umps is also investigated. The experimental results show that the conversion efficiency keeps constant when the spacing of the two pumps varies within a small range.

Keywords: 42.55.Px 42.60.Lh. 42.65.-k

Received: 20 May 2009 Published: 27 November 2009

PACS:	42.55.Px	(Semiconductor lasers; laser diodes)
	42.60.Lh. 42.65.-k

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https://cpl.iphy.ac.cn/10.1088/0256-307X/26/12/124208 OR https://cpl.iphy.ac.cn/Y2009/V26/I12/124208

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	CHENG Cheng
	ZHANG Xin-Liang
	ZHANG Yu
	ZHOU En-Bo
	LIU Lei
	ZHANGYin
	HUANG De-Xiu

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[9] Porzi C, Bogoni A, Poti L and Contestabile G 2004 CLEO San Francisco CTuW4
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