Chin. Phys. Lett.  2009, Vol. 26 Issue (10): 107803    DOI: 10.1088/0256-307X/26/10/107803
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Time-Resolved Photoluminescence of Metamorphic InGaAs Quantum Wells
MA Shan-Shan, WANG Bao-Rui, SUN Bao-Quan, WU Dong-Hai, NI Hai-Qiao, NIU Zhi-Chuan
SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
Cite this article:   
MA Shan-Shan, WANG Bao-Rui, SUN Bao-Quan et al  2009 Chin. Phys. Lett. 26 107803
Download: PDF(672KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract We investigate the temperature dependence of photoluminescence (PL) and time-resolved PL on the metamorphic InGaAs quantum wells (QWs) with an emission wavelength of 1.55μm at room temperature. Time-resolved PL measurements reveal that the optical properties can be partly improved by introducing antimony (Sb) as a surfactant during the sample growth. The temperature dependence of the radiative lifetime is measured, showing that for QWs grown with Sb assistance, the intrinsic exciton emission is dominated when the temperature is below 60K, while the nonradiative process becomes activated with further increases in temperature. However, without Sb assistance, the nonradiative centers are activated when the temperature is higher than 20K.
Keywords: 78.67.De      78.47.+p      78.55.Cr     
Received: 16 April 2009      Published: 27 September 2009
PACS:  78.67.De (Quantum wells)  
  78.47.+p  
  78.55.Cr (III-V semiconductors)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/10.1088/0256-307X/26/10/107803       OR      https://cpl.iphy.ac.cn/Y2009/V26/I10/107803
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
MA Shan-Shan
WANG Bao-Rui
SUN Bao-Quan
WU Dong-Hai
NI Hai-Qiao
NIU Zhi-Chuan
[1] King R R et al 2007 Appl. Phys. Lett. 90183516
[2] Jo S J, Ihn S G and Song J I 2005 Appl. Phys. Lett. 86 111903
[3] Zhukov A E et al 2003 Semiconductors 37 1119
[4] T{\aangring I, Wang S, Sadeghi M and Larsson A 2006 Electron. Lett. 42 691
[5] T{\aangring I et al 2007 Appl. Phys. Lett. 91221101
[6] Wu D H et al 2008 Electron. Lett. 44 474
[7] T{\aangring I, Wang S M, Gu Q F, Wei Y Q, Sadeghi M,Larsson A, Zhao Q X, Akram M N and Berggren J 2005 Appl. Phys.Lett. 86 171902
[8] Kageyama T, Miyamoto T, Ohta M, Matsuura T, Matsui Y,Furuhata T and Koyama F 2004 J. Appl. Phys. 96, 44
[9] Chang Y A, Kuo H C, Chang Y H and Wang S C 2005 Appl.Phys. Lett. 87 061908
[10] Wu D H, Niu Z C, Zhang S Y, Ni H Q, He Z H, Sun Z, Han Qand Wu R H 2006 J. Cryst. Growth 290 494
[11] Wu B P, Wu D H, Ni H Q, Huang S S, Zhan F, Xiong Y H, XuY Q and Niu Z C 2007 Chin. Phys. Lett. 24 3543
[12] Qu Y H, Jiang D S, Wu D H, Niu Z C and Sun Z 2005 Chin. Phys. Lett. 22 2088
[13] Tersoff J 1993 Appl. Phys. Lett. 62 693
[14] Liu Y W and Wang H 2006 J. Vac. Sci. Technol. B 24 1071
[15] Ribas P, Krishnamoorthy V and Park R M 1990 Appl.Phys. Lett. 57 1040
[16] Varshini Y P 1967 Physica 34 149
[17] Xu Z Y, Lu Z D, Yang X P, Yuan Z L, Zheng BZ, Xu J Z, GeW K, Wang Y, Wang J and Chang L L 1996 Phys. Rev. B 5411528
[18] Sun B Q, Jiang D S, Pan Z, Li L H and Wu R H 2000 Appl. Phys. Lett. 77 4148
[19] Akiyama H, Koshiba S, Someya T, Wada K, Noge H, NakamuraY, Inoshita T, Shimizu A and Sakaki H 1994 Phys. Rev. Lett. 72 924
Related articles from Frontiers Journals
[1] CAO Xiao-Long, WANG Yu-Ye, XU De-Gang, **, ZHONG Kai, LI Jing-Hui, LI Zhong-Yang, ZHU Neng-Nian, YAO Jian-Quan,. THz-Wave Difference Frequency Generation by Phase-Matching in GaAs/AlxGa1−xAs Asymmetric Quantum Well[J]. Chin. Phys. Lett., 2012, 29(1): 107803
[2] XU Sheng-Rui**, LIN Zhi-Yu, XUE Xiao-Yong, LIU Zi-Yang, MA Jun-Cai, JIANG Teng, MAO Wei, WANG Dang-Hui, ZHANG Jin-Cheng, HAO Yue. Comparative Study of the Characteristics of the Basal Plane Stacking Faults of Nonpolar a−Plane and Semipolar (11[J]. Chin. Phys. Lett., 2012, 29(1): 107803
[3] SONG Shi-Wei, LIANG Hong-Wei**, LIU Yang, XIA Xiao-Chuan, SHEN Ren-Sheng, LUO Ying-Min, DU Guo-Tong,. A Study of GaN Grown on SiH4 Pre-Treated 6H-SiC Substrates[J]. Chin. Phys. Lett., 2012, 29(1): 107803
[4] SIB KRISHNA Ghoshal**, M. R. Sahar, M. S. Rohani . Dielectric Function of Silicon Nanoclusters: Role of Hydrogen[J]. Chin. Phys. Lett., 2011, 28(9): 107803
[5] XIE Zi-Li**, ZHANG Rong, LIU Bin, XIU Xiang-Qian, SU Hui, LI Yi, HUA Xue-Mei, ZHAO Hong, CHEN Peng, HAN Ping, SHI Yi, ZHENG You-Dou . Growth and Properties of Blue and Amber Complex Light Emitting InGaN/GaN Multi-Quantum Wells[J]. Chin. Phys. Lett., 2011, 28(8): 107803
[6] YI Ming, CHEN Zhi-Feng, CHEN Da-Xin, Sukegawa Hiroaki, Inomata Koichiro, LAI Tian-Shu, ZHOU Shi-Ming, ** . Spin Dynamics of B2 and L21−Ordered Co2FeAl0.5Si0.5 Heusler Alloy Films[J]. Chin. Phys. Lett., 2011, 28(6): 107803
[7] SUI Yan-Ping**, YU Guang-Hui . Effect of Mg Doping on the Photoluminescence of GaN:Mg Films by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy[J]. Chin. Phys. Lett., 2011, 28(6): 107803
[8] WANG Lai**, ZHAO Wei, HAO Zhi-Biao, LUO Yi . Photocatalysis of InGaN Nanodots Responsive to Visible Light[J]. Chin. Phys. Lett., 2011, 28(5): 107803
[9] LIU Zhan-Hui, XIU Xiang-Qian**, YAN Huai-Yue, ZHANG Rong, XIE Zi-Li, HAN Ping, SHI Yi, ZHENG You-Dou . Gallium Nitride Nanowires Grown by Hydride Vapor Phase Epitaxy[J]. Chin. Phys. Lett., 2011, 28(5): 107803
[10] LV Wen-Bin, WANG Lai**, WANG Jia-Xing, HAO Zhi-Biao, LUO Yi . Density Increase of Upper Quantum Dots in Dual InGaN Quantum-Dot Layers[J]. Chin. Phys. Lett., 2011, 28(12): 107803
[11] ZHOU Xiao-Hao**, CHEN Ping-Ping, CHEN Xiao-Shuang, LU Wei . Temperature-Dependent Optical Properties of InAs/GaAs Self-Assembled Quantum Dots: Spectroscopic Measurements and an Eight-Band Study[J]. Chin. Phys. Lett., 2011, 28(11): 107803
[12] ZHOU Wei**, YANG Jie, XIA Su-Jing, LI Xiang, TANG Wu . Influence of Rapid Thermal Annealing on Carrier Dynamics in GaInNAs/GaAs Multiple Quantum Wells[J]. Chin. Phys. Lett., 2011, 28(11): 107803
[13] ZHAO Hong-Wei**, HU Wei-Xuan, XUE Chun-Lai, CHENG Bu-Wen, WANG Qi-Ming . Design of Waveguide Integrated Ge-Quantum-Well Electro-Absorption Modulators[J]. Chin. Phys. Lett., 2011, 28(1): 107803
[14] YAN Huai-Yue, XIU Xiang-Qian, HUA Xue-Mei, LIU Zhan-Hui, ZHOU An, ZHANG Rong, XIE Zi-Li, HAN Ping, SHI Yi, ZHENG You-Dou . Optical and Structural Properties of Cr-Doped GaN Grown by HVPE Method[J]. Chin. Phys. Lett., 2010, 27(12): 107803
[15] LI Yao-Yao, LI Ai-Zhen, WEI Lin, LI Hua, XU Gang-Yi, ZHANG Yong-Gang. High-Temperature Operation of 8.5μm Distributed Feedback Quantum Cascade Lasers[J]. Chin. Phys. Lett., 2009, 26(8): 107803
Viewed
Full text


Abstract