CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Magnetoresistance in Parent Pnictide AFe2As2(A=Sr, Ba) |
ZHENG Ping, CHEN Gen-Fu, LI Zheng, HU Wan-Zheng, DONG Jing, LI Gang, WANG Nan-Lin, LUO Jian-Lin |
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 |
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Cite this article: |
ZHENG Ping, CHEN Gen-Fu, LI Zheng et al 2009 Chin. Phys. Lett. 26 107401 |
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Abstract Magnetoresistances of SrFe2As2 and BaFe2As2 in the magnetic ordered state are studied. Positive magnetoresistance is observed in the magnetic fields H applied in the azimuthes of θta = 0°and 30° with respect to the c-axis. The magnetoresistance can reach 20% for SrFe2As2 and 12% for BaFe2As2 at H = 9 T with θ= 0°(H || c). Above the magnetic transition temperature, the magnetoresistance becomes negligible. The data in the magnetic ordered state could be described by a modified two-band galvanomagnetic model including the enhancement effect of the applied magnetic field on the spin-density-wave gap. The field enhanced spin-density-wave gaps for different types of carriers are different. Temperature dependencies of the fitting parameters are discussed.
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Keywords:
74.70.Dd
72.15.Gd
72.20.My
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Received: 22 April 2009
Published: 27 September 2009
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PACS: |
74.70.Dd
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(Ternary, quaternary, and multinary compounds)
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72.15.Gd
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(Galvanomagnetic and other magnetotransport effects)
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72.20.My
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(Galvanomagnetic and other magnetotransport effects)
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