| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer |
| WANG Hui1, ZHU Ji-Hong1, JIANG De-Sheng1, ZHU Jian-Jun1, ZHAO De-Gang1, LIU Zong-Shun1, ZHANG Shu-Ming1, YANG Hui1,2 |
| 1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO BOX 912, Beijing 1000832Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 |
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| Cite this article: |
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WANG Hui, ZHU Ji-Hong, JIANG De-Sheng et al 2009 Chin. Phys. Lett. 26 107302 |
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Abstract Mg-doped p-InGaN layers with In composition of about 10% are grown by metalorganic chemical vapor deposition (MOCVD). The effect of the annealing temperature on the p-type behavior of Mg-doped InGaN is studied. It is found that the hole concentration in p-InGaN increases with a rising annealing temperature in the range of 600-850°C, while the hole mobility remains nearly unchanged until the annealing temperature increases up to 750°C, after which it decreases. On the basis of conductive p-type InGaN growth, the p-In0.1Ga0.9N/i-In0.1Ga0.9N/n-GaN junction structure is grown and fabricated into photodiodes. The spectral responsivity of the InGaN/GaN p-i-n photodiodes shows that the peak responsivity at zero bias is in the wavelength range 350-400nm.
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73.61.Ey
78.40.Fy
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Received: 12 May 2009
Published: 27 September 2009
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