| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers |
| ZHOU Zhi-Qiang, XU Ying-Qiang, HAO Rui-Ting, TANG Bao, REN Zheng-Wei, NIU Zhi-Chuan |
| State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Cite this article: |
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ZHOU Zhi-Qiang, XU Ying-Qiang, HAO Rui-Ting et al 2009 Chin. Phys. Lett. 26 018101 |
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Abstract We investigate the molecular beam epitaxy growth of GaSb films on GaAs substrates using AlSb buffer layers. Optimization of AlSb growth parameter is aimed at obtaining high GaSb crystal quality and smooth GaSb surface. The optimized growth temperature and thickness of AlSb layers are found to be 450°C and 2.1nm, respectively. A rms surface roughness of 0.67nm over 10×10μm2 is achieved as a 0.5μm GaSb film is grown under optimized conditions.
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| Keywords:
81.05.Ea
81.15.Hi
74.78.Fk
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Received: 22 September 2008
Published: 24 December 2008
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| PACS: |
81.05.Ea
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(III-V semiconductors)
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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74.78.Fk
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(Multilayers, superlattices, heterostructures)
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