| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Metamorphic InGaAs Quantum Well Laser Diodes at 1.5μm on GaAs Grown by Molecular Beam Epitaxy |
WANG Hai-Li1, WU Dong-Hai1, WU Bing-peng1, NI Hqiao-Qiao1, HUANG She-Song1, XIONG Yong-Hua1, WANG Peng-Fei1, HAN Qin1, NIU Zhi-Chuan1, I.
Tångring2, S. M. Wang2 |
| 1State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100082Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gothenburg, Sweden |
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WANG Hai-Li, WU Dong-Hai, WU Bing-peng et al 2009 Chin. Phys. Lett. 26 014214 |
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Abstract We report a 1.5-μm InGaAs/GaAs quantum well laser diode grown by molecular beam epitaxy on InGaAs metamorphic buffers. At 150K, for a 1500×10μm2 ridge waveguide laser, the lasing wavelength is centred at 1.508μm and the threshold current density is 667A/cm2 under pulsed operation. The pulsed lasers can operate up to 286K.
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| Keywords:
42.55.Xi
78.55.Cr
68.65.Fg
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Received: 19 April 2008
Published: 24 December 2008
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