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Electronic Energy Levels in an Asymmetric Quantum-Dots-in-a-Well Structure for Infrared Photodetectors |
WANG Zhi-Cheng, XU Bo, CHEN Yong-Hai, SHI Li-Wei, LIANG Zhi-Mei, WANG
Zhan-Guo |
| Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Cite this article: |
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WANG Zhi-Cheng, XU Bo, CHEN Yong-Hai et al 2008 Chin. Phys. Lett. 25 2645-2648 |
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Abstract Theoretical calculation of electronic energy levels of an asymmetric InAs/InGaAs/GaAs quantum-dots-in-a-well (DWELL) structure for infrared photodetectors is performed in the framework of effective-mass envelope-function theory. Our calculated results show that the electronic energy levels in quantum dots (QDs) increase when the asymmetry increases and the ground state energy increases faster than the excited state energies. Furthermore, the results also show that the electronic energy levels in QDs decrease as the size of QDs and the width of quantum well (QW) in the asymmetric DWELL structure increase. Additionally, the effects of asymmetry, the size of QDs and the width of QW on the response peak of asymmetry DWELL photodetectors are also discussed.
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| Keywords:
78.66.Fd
63.65.Hb
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Received: 26 February 2008
Published: 26 June 2008
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