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Effect of Annealing Temperature on Structural and Optical Properties of N-Doped ZnO Films |
| ZHONG Sheng, ZHANG Wei-Ying, WU Xiao-Peng, LIN Bi-Xia, FU Zhu-Xi |
| Department of Physics, University of Science and Technology of China, Hefei 230026 |
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| Cite this article: |
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ZHONG Sheng, ZHANG Wei-Ying, WU Xiao-Peng et al 2008 Chin. Phys. Lett. 25 2585-2587 |
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Abstract Nitrogen-doped ZnO (ZnO:N) films are prepared by thermal oxidation of sputtered Zn3N2 layers on Al2O3 substrates. The correlation between the structural and optical properties of ZnO:N films and annealing temperatures is investigated. X-ray diffraction result demonstrates that the as-sputtered Zn3N2 films are transformed into ZnO:N films after annealing above 600°C. X-ray photoelectron spectroscopy reveals that nitrogen has two chemical states in the ZnO:N films: the NO acceptor and the double donor (N2)O. Due to the No acceptor, the hole concentration in the film annealed at 700°C is predicted to be highest, which is also confirmed by Hall effect measurement. In addition, the temperature dependent photoluminescence spectra allow to calculate the nitrogen acceptor binding energy.
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61.72.Vv
68.49.Uv
71.55.Gs
81.05.Dz
81.15.Cd
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Received: 27 February 2008
Published: 26 June 2008
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