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Mechanism of Current Oscillations in Gallium ArsenidePhotoconductive Semiconductor Switches |
TIAN Li-Qiang, SHI Wei |
Department of Applied Physics, Xi'an University of Technology, Xi'an 710048 |
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Cite this article: |
TIAN Li-Qiang, SHI Wei 2008 Chin. Phys. Lett. 25 2511-2513 |
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Abstract Semi-insulating photoconductive semiconductor switch with an electrode gap of 4mm, triggered by a laser pulse with energy of 0.5mJ, and applied bias of 2.5kV, the periodicity current oscillation with a cycle of 12ns is obtained. It is indicated that the current oscillation is one mode of transferred electron effect, namely quenched domain mode. This mode of trans-electron oscillator is obtained when the instantaneous bias electric field drops below the sustaining field (the minimum electric field required to support the domain) before the domain reaches the anode, which leads to the domain disappears somewhere in the bulk of the switch and away from the ohmic contacts. We mainly analyse the time-dependent characteristic of the mode, the theoretical analysis results are in excellent agreement with the experiment.
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Keywords:
42.65.Re
72.40.+w
85.30.Fg
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Received: 14 November 2007
Published: 26 June 2008
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PACS: |
42.65.Re
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(Ultrafast processes; optical pulse generation and pulse compression)
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72.40.+w
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(Photoconduction and photovoltaic effects)
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85.30.Fg
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(Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices))
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[1] Keil U D, Gerritsen H J, Haverkort J E M et al 1995 Appl. Phys. Lett. 66 1629 [2] Nahata A, Yardley J T and Heinz T F 1999 Appl. Phys.Lett. 75 2524 [3] Shi W, Tian L and Liu Z et al 2008 Appl. Phys. Lett. 92 043511 [4] Loubriel G M, Zutavern F J, Baca A G et al 1997 IEEETrans. Plasma Sci. 25 124 [5] Hudgins J L, Bailey D W, Dougal R A et al 1995 IEEETans. Power Electrics 10 615 [6] Zhang T, Shi S and Zhao W 2007 SPIE Proc. 6279 627946 [7] Shi W, Chen E, Zhang X et al 2002 Chin. Phys. Lett. 19 1119 [8] Tian L and Shi W 2007 Chin. Semicond. J. 28819 [9] Shi W and Tian L 2006 Appl. Phys. Lett. 89202103 [10] Liu X, Shi B, Jia G et al 2007 Appl. Phys. Lett. 90 101109 [11] Garcia H and Kalyanaraman R 2007 Appl. Phys. Lett. 91 111114 [12] Kiyama M, Tatsumi M and Yamada M 2005 Appl. Phys.Lett. 86 012102 |
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