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Sinusoidal Steady State Analysis on 4H--SiC Buried Channel MOSFETs |
| ZHANG Tao;LU Hong-Liang;ZHANG Yi-Men;ZHANG Yu-Ming;YE Li-Hui |
| Microelectronics Institute, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Ministry of Education, Xidian University, Xi'an 710071 |
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| Cite this article: |
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ZHANG Tao, LU Hong-Liang, ZHANG Yi-Men et al 2008 Chin. Phys. Lett. 25 1818-1821 |
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Abstract With the combined use of the drift-diffusion (DD) model, experimental measured parameters and small-signal sinusoidal steady-state analysis, we extract the Y-parameters for 4H--SiC buried-channel metal oxide semiconductor field effect transistors (BCMOSFETs). Output short-circuit current gain G and Mason's invariant U are calculated for extrapolating unity current gain frequency in the common-source configuration fT and the maximum frequency of oscillation fmax, respectively. Here fT=800MHz and fmax=5GHz are extracted for the 4H--SiC BCMOSFETs, while the field effect mobility reaches its peak value 87cm2/Vs when VGS=4.5V. Simulation results clearly show that the characteristic frequency of 4H--SiC BCMOSFETs and field effect mobility are superior, due to the novel structure, compared with conventional MOSFETs.
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| Keywords:
71.20.Nr
72.20.-i
73.40.Qv
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Received: 26 September 2007
Published: 29 April 2008
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| PACS: |
71.20.Nr
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(Semiconductor compounds)
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72.20.-i
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(Conductivity phenomena in semiconductors and insulators)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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[1] Lv H L, Zhang Y M, Zhang Y M and Yang L A 2004 IEEETrans. Electron Devices 51 1065
[2] Gudjonsson G, Allerstam F, Olafsson H O, Nilsson P \AA\et al 2006 IEEE Electron Device Lett. 27 469
[3] Schorner R, Friedrichs P, Peters D and Stephani D 1999 IEEEElectron Device Lett. 20 241
[4] Das M K, Um B S and Cooper J A Jr 2000 Mater. Sci. Forum 338 1069
[5] Afanasev V V, Bassler M, Pensl G and Schulz M 1997 Phys. Status Solidi A 162 321
[6] Harada S, Suzuki S and Senzaki J 2001 IEEE Electron DeviceLett. 22 272
[7] Jaeger R C andGaensslen F H 1980 IEEE Trans. Electron Devices 27 914
[8] Caughey D M and Thomas R E 1967 Proc. IEEE 52 2192
[9] Ruff M, Mitlehner H and Helbig R 1994 IEEE Trans. ElectronDevices 41 1040
[10] Roschke M, Schwierz F 2001 IEEE Trans. Electron Devices 48 1442
[11] Laux S E 1985 IEEE Trans. Electron Devices 32 2028
[12] Mason S J 1954 Trans. IRE Professional Group on CircuitTheory 1 20
[13] Madhu S G 1992 IEEE Trans. Microwave Theor. Tech. 40864
[14] Sheppard S T, Melloch M R and Cooper J A Jr 1994 IEEE Trans.Electron Devices 41 1257
[15] Sheppard S T, Melloch M R and Cooper J A Jr 1996 IEEEElectron Device Lett. 17 4 |
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