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Detailed Characteristics of Expansion Velocity of Si from Laser Ablated SiC |
CHEN Ming1;LIU Xiang-Dong1;SUN Yu-Ming2;YANG Xin-Mei1;ZHAO Ming-Wen1;QI Huan-Jun2;CHEN Xiu-Fang3;XU Xian-Gang3 |
| 1School of Physics, Shandong University, Jinan 2501002School of Information Science and Engineering, Shandong University, Jinan 2501003State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 |
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CHEN Ming, LIU Xiang-Dong, SUN Yu-Ming et al 2008 Chin. Phys. Lett. 25 1768-1771 |
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Abstract Optical emission of plasma is used to investigate the characteristics of dynamics distribution in the plume generated by ablation of a SiC sample using Nd:YAG laser. The plume expansion dynamics is characterized by time-of-flight measurement. We find that the profiles of Si (I) (390.55nm) split
into two components and the Si (II) (634.71nm) spectra show two distinct expansion dynamics regions. The time-of-flight measurement of Si(II) (634.71nm) under different laser irradiance conditions, from 0.236GW/cm2 to 1.667GW/cm2, are presented and discussed.
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| Keywords:
52.50.Jm
52.70.Kz
51.50.+v
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Received: 24 October 2007
Published: 29 April 2008
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| PACS: |
52.50.Jm
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(Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.))
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52.70.Kz
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(Optical (ultraviolet, visible, infrared) measurements)
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51.50.+v
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(Electrical properties)
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