Chin. Phys. Lett.  2008, Vol. 25 Issue (5): 1717-1719    DOI:
Original Articles |
Fabrication of Triplexers Based on Flattop SOI AWG
AN Jun-Ming1;WU Yuan-Da1;LI Jian2;LI Jian-Guang1;WANG Hong-Jie1;LI Jun-Yi1;HU Xiong-Wei1
1R&D Center of Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 1000832National Institute of Metrology, Beijing 100013
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AN Jun-Ming, WU Yuan-Da, LI Jian et al  2008 Chin. Phys. Lett. 25 1717-1719
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Abstract A triplexer is fabricated based on SOI arrayed waveguide gratings (AWGs). Three wavelengths of the triplexer operate at different diffraction orders of an arrayed waveguide grating. The signals of 1490nm and 1550nm, which are
input from central input waveguide of an AWG, are demultiplexed and the signal of 1310nm, which is input from central output waveguide of an AWG, is uploaded. The tested results show that the downloaded and uploaded signals have flat-top response. The insertion loss is 9dB on chip, the nonadjacent crosstalk is less than -30dB for 1490nm and 1301nm, and is less than -25dB for 1550nm, the 3dB bandwidth equates that of the input light source.
Keywords: 42.82.-m      42.82.Et      42.82.Ds     
Received: 02 February 2008      Published: 29 April 2008
PACS:  42.82.-m (Integrated optics)  
  42.82.Et (Waveguides, couplers, and arrays)  
  42.82.Ds (Interconnects, including holographic interconnects)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2008/V25/I5/01717
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Articles by authors
AN Jun-Ming
WU Yuan-Da
LI Jian
LI Jian-Guang
WANG Hong-Jie
LI Jun-Yi
HU Xiong-Wei
[1] Hong J K and Lee S S 2008 IEEE Photon. Technol.Lett. 1 21
[2] Lee T, Lee D and Chung Y 2008 IEEE Photon. Technol.Lett. 1 33
[3] Song J H, Lim J H, Kim R K and Lee K S 2005 IEEEPhoton. Technol. Lett. 12 2607
[4] Song J H, Kim K Y, Cho J, Han D, Lee J, Lee Y S and Jung S2005 IEEE Photon. Technol. Lett. 8 1668
[5] Lang T T, He J J and He S L 2006 IEEE Photon.Technol. Lett. 1 232
[6] Yamada T, Suxuki S, Moriwaki K, Hibino Y, Tohmori Y,Skutsu Y, Nakasuga Y, Hashimoto T, Terui H, Yanagisawa M, Inoue Y,Akahori Y and Nagasi R 1995 Electron. Lett. 16 1366
[7] Amersfoort M R, Soole J B D, LeBlanc H P, Andreadakis N C,Rajhel A and Caneau C 1996 Electron. Lett. 5 449
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