Chin. Phys. Lett.  2008, Vol. 25 Issue (4): 1457-1460    DOI:
Original Articles |
Efficient Solution-Processed Blue Electrophosphorescent Devices Based on a Novel Small-Molecule Host
HOU Liu-Dong;LI Wei;DUAN Lian;QIU Yong
Key Lab of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084
Cite this article:   
HOU Liu-Dong, LI Wei, DUAN Lian et al  2008 Chin. Phys. Lett. 25 1457-1460
Download: PDF(7203KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract Efficient blue small molecular phosphorescent light-emitting diodes with a blue phosphorescent dyebis(3,5-difluoro-2-(2-pyridyl)-phenyl-(2-carboxypride) iridium (III) (FIrpic) doped into a novel small-molecule host 9,9-bis[4-(3,6-di-tert-butylcarbazol-9-yl)phenyl] fluorene (TBCPF) as the light-emitting layer have been fabricated by spin-coating. The host TBCPF can form homogeneous amorphous films by spin-coating and has triplet energy higher than that of the blue phosphorescent dye FIrpic. All the devices with different FIrpic concentration in the emitting layer give emission from FIrpic indicating complete energy transfer from TBCPF to FIrpic. The device shows the best performance with a peak brightness of 8050cd/m2 at 10.2V and the maximum current efficiency up to 3.52cd/A, when the FIrpic doped concentration is as
high as 16%.
Keywords: 78.60.Fi      78.66.Qn      85.60.Jb      81.15.-z     
Received: 24 December 2007      Published: 31 March 2008
PACS:  78.60.Fi (Electroluminescence)  
  78.66.Qn (Polymers; organic compounds)  
  85.60.Jb (Light-emitting devices)  
  81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2008/V25/I4/01457
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
HOU Liu-Dong
LI Wei
DUAN Lian
QIU Yong
[1] Tang C W and VanSlyke S A 1987 Appl. Phys. Lett. 51 913
[2] Baldo M A et al 1998 Nature 395 151
[3] Burroughes J H, et al. 1990 Nature 347 539.
[4] Elschner A et al 2001 Adv. Mater. 13 1811
[5] Cheng J A, Chen C H and Liao C H 2004 Chem. Mater. 162862
[6] Qiao J et al 2005 Chem. Commun. 4560
[7] Gong X et al 2006 J. Phys. Chem. B 110 7344
[8] Hino Y, Kajii H and Ohmori Y 2004 Org. Electron. 5 265
[9] Jou J H et al 2005 Appl. Phys. Lett. 87 043508
[10] Ooe M et al 2006 Jpn. J. Appl. Phys. 45 250
[11] Li W et al 2007 Tetrahedron 63 10161
[12] Yang X H et al 2006 Appl. Phys. Lett. 88 021107
Related articles from Frontiers Journals
[1] ZENG Chang, ZHANG Shu-Ming**, WANG Hui, LIU Jian-Ping, WANG Huai-Bing, LI Zeng-Cheng, FENG Mei-Xin, ZHAO De-Gang, LIU Zong-Shun, JIANG De-Sheng, YANG Hui. Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN[J]. Chin. Phys. Lett., 2012, 29(1): 1457-1460
[2] LI Zhe-Yang, **, HAN Ping, LI Yun, NI Wei-Jiang, BAO Hui-Qiang, LI Yu-Zhu . Epitaxial Growth of 4H-SiC on 4° Off-Axis Substrate for Power Devices[J]. Chin. Phys. Lett., 2011, 28(9): 1457-1460
[3] DAI Ke-Hui, **, WANG Lian-Shan**, HUANG De-Xiu, SOH Chew-Beng, CHUA Soo-Jin, . Influence of Size of ZnO Nanorods on Light Extraction Enhancement of GaN-Based Light-Emitting Diodes[J]. Chin. Phys. Lett., 2011, 28(9): 1457-1460
[4] YIN Yang, RAN Guang-Zhao**, ZHANG Bin, QIN Guo-Gang** . Photo- and Electro-Luminescence at 1.54µm from Er3+ in SiC:Er2O3 Films and Structures[J]. Chin. Phys. Lett., 2011, 28(7): 1457-1460
[5] WU Meng, **, ZENG Yi-Ping, , WANG Jun-Xi, HU Qiang . Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate[J]. Chin. Phys. Lett., 2011, 28(6): 1457-1460
[6] LIAN Jia-Rong**, NIU Fang-Fang, LIU Ya-Wei, ZENG Peng-Ju . Improved Hole-Blocking and Electron Injection Using a TPBI Interlayer at the Cathode Interface of OLEDs[J]. Chin. Phys. Lett., 2011, 28(4): 1457-1460
[7] CHEN Jun, FAN Guang-Han**, PANG-Wei, ZHENG Shu-Wen . Comparison of GaN-Based Light-Emitting Diodes by Using the AlGaN Electron-Blocking Layer and InAlN Electron-Blocking Layer[J]. Chin. Phys. Lett., 2011, 28(12): 1457-1460
[8] PANG Hua**, ZHANG Gu-Ling, WANG Xing-Quan, LV Guo-Hua, CHEN Huan, YANG Si-Ze, . Mechanical Performances of Carbonitriding Films on Cast Iron by Plasma Electrolytic Carbonitriding[J]. Chin. Phys. Lett., 2011, 28(11): 1457-1460
[9] WANG Jia-Xing, WANG Lai**, HAO Zhi-Biao, LUO Yi . Efficiency Droop Effect Mechanism in an InGaN/GaN Blue MQW LED[J]. Chin. Phys. Lett., 2011, 28(11): 1457-1460
[10] FENG Lie-Feng**, LI Yang, LI Ding, WANG Cun-Da, ZHANG Guo-Yi, YAO Dong-Sheng, LIU Wei-Fang, XING Peng-Fei . Frequency Response of Modulated Electroluminescence of Light-Emitting Diodes[J]. Chin. Phys. Lett., 2011, 28(10): 1457-1460
[11] SUN Jing**, ZHAO Yi-Kun, WANG Xin-Qiang, REN Quan, CHEN Jing-Wei, ZHANG Guang-Hui, XU Dong, WANG He-Zhou . Nonlinear Optical Studies of [(C4H9)4N][Ni(dmit)2] by Z-Scan Technique[J]. Chin. Phys. Lett., 2011, 28(10): 1457-1460
[12] LIANG Chun-Jun, ZOU Hui, HE Zhi-Qun, ZHANG Chun-Xiu, LI Dan, WANG Yong-Sheng. Polymer Light-Emitting Diode Using Conductive Polymer as the Anode Layer[J]. Chin. Phys. Lett., 2010, 27(9): 1457-1460
[13] DU Xiao-Zhang, LU Hai, CHEN Dun-Jun, XIU Xiang-Qian, ZHANG Rong, ZHENG You-Dou. UV Light-Emitting Diodes at 340nm Fabricated on a Bulk GaN Substrate[J]. Chin. Phys. Lett., 2010, 27(8): 1457-1460
[14] QIAO Xian-Feng, CHEN Jiang-Shan, MA Dong-Ge. Comparative Study on Hole Transport in N,N'-bis(naphthalen-1-yl)-N,N'- bis(pheny) Benzidine and 4,4',4''-tri(N-carbazolyl)triphenylamine[J]. Chin. Phys. Lett., 2010, 27(8): 1457-1460
[15] WANG Cong, ZHANG Fang, KIM Nam-Young. Development and Characterization of Metal-Insulator-Metal Capacitors with SiNx Thin Films by Plasma-Enhanced Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2010, 27(7): 1457-1460
Viewed
Full text


Abstract