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Thickness Dependence of Resistivity and Optical Reflectance of ITO Films |
| GAO Mei-Zhen1,2;JOB R2;XUE De-Sheng1;FAHRNER W R2 |
| 1Key Lab for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 7300002Department of Electronic Devices, Faculty of Electrical Engineering, University of Hagen, Haldener Str. 182, D-58084 Hagen, Germany |
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| Cite this article: |
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GAO Mei-Zhen, JOB R, XUE De-Sheng et al 2008 Chin. Phys. Lett. 25 1380-1383 |
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Abstract Indium-tin-oxide (ITO) films deposited on crystalline silicon wafer and Corning glass are prepared by direct-current magnetron sputtering method at room temperature with various thicknesses. The thickness dependences of structure, resistance and optical reflectance of ITO films are characterized.
The results show that when the film thickness is less than 40nm, the resistivity and optical reflectance of the ITO film changes remarkably with thickness. The optoelectrical properties trend to stabilize when the thickness is over 55nm. The GXRD result implies that the ITO film begins to crystallize if only the thickness is large enough.
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60.10.Nz
78.20.-e
78.00.-w
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Received: 23 October 2007
Published: 31 March 2008
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