| Original Articles |
|
|
|
|
Continuous-Wave Operation of GaN Based Multi-Quantum-Well Laser Diode at Room Temperature |
| ZHANG Li-Qun1;ZHANG Shu-Ming1;YANG Hui1,2; CAO Qing3;JI Lian1;ZHU Jian-Jun1;LIU Zong-Shun1;ZHAO De-Gang1; JIANG De-Sheng1;DUAN Li-Hong1;WANG Hai1;SHI Yong-Sheng1;LIU Su-Ying1;CHEN Liang-Hui3;LIANG Jun-Wu1 |
| 1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, PO BOX 912, Beijing 1000832Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 2151233Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, PO BOX 912, Beijing 100083 |
|
| Cite this article: |
|
ZHANG Li-Qun, ZHANG Shu-Ming, YANG Hui et al 2008 Chin. Phys. Lett. 25 1281-1283 |
|
|
|
Abstract Room-temperature operation of cw GaN based multi-quantum-well laser diodes (LDs) is demonstrated. The LD structure is grown on a sapphire (0001) substrate by metalorganic chemical vapour deposition. A 2.5μm×800μm ridge
waveguide structure is fabricated. The electrical and optical characteristics of the laser diode under direct current injection at room temperature are investigated. The threshold current and voltage of the LD under cw operation are 110mA and 10.5V, respectively. Thermal induced series resistance decrease and emission wavelength red-shift are observed as the injection current is increased. The full width at half maximum for the parallel and perpendicular far field pattern (FFP) are 12°and 32°, respectively.
|
| Keywords:
42.55.Px
78.45.+h
78.67.De
|
|
|
Received: 27 December 2007
Published: 31 March 2008
|
|
|
|
|
|
|
|
[1]Nakamura S, Senoh M, Iwasa N, Yamada T, Matsuhita T,Iroyuki H and Sugimoto Y 1996 Jpn. J. Appl. Phys. 35
[2] Nagahama S I, Yanamoto T, Sano M and Mukai T 2002 Jpn. J. Appl. Phys. 41 5
[3] Nakamura S, Senoh M, Nagahama S I, Iwasa N, Matsushita Tand Mukai T 2000 Appl. Phys. Lett. 76 22
[4] Yang H, Chen L H, Zhang S M, Chong M, Zhu J J, Zhao D G,Ye X J, Li D Y, Liu Z S, Duan L H and Wang H et al 2005 Chin.J. Semiconduct. 26 414
[5] Chen J, Wang J F, Wang H, Zhu J J, Zhang S M, Zhao D G,Jiang D S, Yang H Jahn U and Ploog K H 2006 Semicond. Sci.Technol. 21 1229
[6] Li D Y, Huang Y Z, Zhu J J, Zhao D G, Liu Z S, Zhang S Mand Yang H 2006 J. Appl. Phys. 100 046101
[7] Zhang J C, Wang J F, Wang Y T, Liu J P, Zhu J J and YangH 2004 J. Appl. Cryst. 37 391
[8] Wang X L, Zhao D G, Yang H and Liang J W 2007 Chin.Phys. Lett. 24 774
[9] Lei T, Ludwig K F and Moustakas T 1993 J. Appl.Phys. 4430
[10] Nakamura S, Senoh M, Nagahama S I, Iwasa N, Yamada T,Matsushita T, Sugimoto Y and Kiyoku H 1997 Jpn. J. Appl. Phys. 36 1059
[11] Goepfert I D, Schubert P E, Osinsky A, Norris P E andFaleev N N 2000 J. Appl. Phys. 88 2030 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
