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Influence of Randomness and Localization on RKKY Interactions in Diluted Magnetic Semiconductors |
| WANG Dan;XIONG Shi-Jie |
| National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 |
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| Cite this article: |
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WANG Dan, XIONG Shi-Jie 2008 Chin. Phys. Lett. 25 1102-1105 |
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Abstract We show that the spatially random distribution of magnetic moments of
dopants in diluted magnetic semiconductors can partially localize the itinerant carriers and change the carrier-mediated indirect RKKY interaction. From numerical calculations of the electron states taking into account the interaction with magnetic impurities which are random both in spatial positions and in orientations of magnetic moments, we obtain the electron states and the RKKY interaction as a function of the distance between magnetic dopants L and of the sp-d exchange integral J. With the increase of disorder, the localization of itinerant electrons become stronger and the long-range regular oscillatory behaviour of the RKKY interaction gradually disappears and is replaced by severe fluctuations. The randomness and localization may enhance the RKKY interaction between dopants with short and middle distances and in favour of the ferromagnetism.
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| Keywords:
75.10.-b
75.50.Pp
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Received: 09 November 2007
Published: 27 February 2008
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| PACS: |
75.10.-b
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(General theory and models of magnetic ordering)
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75.50.Pp
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(Magnetic semiconductors)
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