| Original Articles |
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Resonant Tunnelling and Storage of Electrons in Si Nanocrystals within a-SiNx/nc-Si/a-SiNx Structures |
WANG Xiang;HUANG Jian;ZHANG Xian-Gao;DING Hong-Lin;YU Lin-Wei,
HUANG Xin-Fan;LI Wei;XU Jun;CHEN Kun-Ji |
| National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 |
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| Cite this article: |
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WANG Xiang, HUANG Jian, ZHANG Xian-Gao et al 2008 Chin. Phys. Lett. 25 1094-1097 |
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Abstract The a-SiNx/nanocrystalline silicon (nc-Si)/a-SiNx sandwiched structures with asymmetric double-barrier are fabricated in a plasma enhanced chemical vapour deposition (PECVD) system on p-type Si substrates. The nc-Si layer in
thickness 5nm is fabricated from a hydrogen-diluted silane gas by the layer-by-layer deposition technique. The thicknesses of tunnel and control SiNx layers are 3nm and 20nm, respectively. Frequency-dependent capacitance spectroscopy is used to study the electron tunnelling and the storage in the sandwiched structures. Distinct frequency-dependent capacitance peaks due to electrons tunnelling into the nc-Si dots and capacitance-voltage (C-V)
hysteresis characteristic due to electrons storage in the nc-Si dots are observed with the same sample. Moreover, conductance peaks have also been observed at the same voltage region by conductance-voltage (G-V) measurements. The experimental results demonstrate that electrons can be loaded onto nc-Si dots via resonant tunnelling and can be stored in our a-SiNx/nc-Si/a-SiNx structures.
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| Keywords:
73.63.Kv
73.40.Qv
73.43.Jn
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Received: 25 December 2007
Published: 27 February 2008
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| PACS: |
73.63.Kv
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(Quantum dots)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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73.43.Jn
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(Tunneling)
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