| Original Articles |
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Neutron Irradiation Effect in Two-Dimensional Electron Gas of AlGaN/GaN Heterostructures |
| ZHANG Ming-Lan;WANG Xiao-Liang;XIAO Hong-Ling;WANG Cui-Mei;RAN Jun-Xue;HU Guo-Xin |
| Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Cite this article: |
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ZHANG Ming-Lan, WANG Xiao-Liang, XIAO Hong-Ling et al 2008 Chin. Phys. Lett. 25 1045-1048 |
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Abstract AlGaN/GaN heterostructures have been irradiated by neutrons with different fluences and characterized by means of temperature-dependent Hall measurements and Micro-Raman scattering techniques. It is found that the carrier mobility of two-dimensional electron gas (2DEG) is very sensitive to neutrons. At a low fluence of 6.13×1015cm-2, the carrier mobility drops sharply, while the sheet carrier density remains the same as that of an unirradiated sample. Moreover, even for a fluence of up to 3.66×1016cm-2, the sheet carrier density shows only a slight drop. We attribute the degradation of the figure-of-merit (product of ns×μ ) of 2DEG to the defects
induced by neutron irradiation. Raman measurements show that neutron
irradiation does not yield obvious change to the strain state of AlGaN/GaN heterostructures, which proves that degradation of sheet carrier density has no relation to strain relaxation in the present study. The increase of the product of ns×μ of 2DEG during rapid thermal annealing processes at relatively high temperature has been attributed to the activation of GeGa transmuted from Ga and the recovery of displaced defects.
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| Keywords:
61.82.Fk
61.80.-x
73.40.Kp
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Received: 01 January 1900
Published: 27 February 2008
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| PACS: |
61.82.Fk
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(Semiconductors)
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61.80.-x
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(Physical radiation effects, radiation damage)
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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