Chin. Phys. Lett.  2008, Vol. 25 Issue (2): 762-764    DOI:
Original Articles |
Reactive Ion Etching as Cleaning Method Post Chemical Mechanical Polishing for Phase Change Memory Device
ZHONG Min1,2;SONG Zhi-Tang1;LIU Bo1;FENG Song-Lin1;CHEN Bomy3
1Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate University of the Chinese Academy of Sciences, Beijing 1000493Silicon Storage Technology, Inc. 1171 Sonora Court, Sunnyvale, CA 94086, USA
Cite this article:   
ZHONG Min, SONG Zhi-Tang, LIU Bo et al  2008 Chin. Phys. Lett. 25 762-764
Download: PDF(1560KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract In order to improve nano-scale phase change memory performance, a super-clean interface should be obtained after chemical mechanical polishing (CMP) of Ge2Sb2Te5 phase change films. We use reactive ion etching (RIE) as the cleaning method. The cleaning effect is analysed by scanning electron microscopy and an energy dispersive spectrometer. The results show that particle residue on the surface has been removed. Meanwhile, Ge2Sb2Te5 material stoichiometric content ratios are unchanged. After the top electrode is deposited, current--voltage characteristics test demonstrates that the set threshold voltage is reduced from 13V to 2.7V and the threshold current from 0.1mA to 0.025mA. Furthermore, we analyse the RIE cleaning principle and
compare it with the ultrasonic method.
Keywords: 85.40.-e      81.65.-b      52.77.Bn      81.65.Cf     
Received: 10 September 2007      Published: 30 January 2008
PACS:  85.40.-e (Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology)  
  81.65.-b (Surface treatments)  
  52.77.Bn (Etching and cleaning)  
  81.65.Cf (Surface cleaning, etching, patterning)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2008/V25/I2/0762
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
ZHONG Min
SONG Zhi-Tang
LIU Bo
FENG Song-Lin
CHEN Bomy
[1] Chong T C and Shi L P 2006 Appl. Phys. Lett. 88 122114
[2] Lai S 2003 IEDM Tech. Dig. 255
[3] Hwang Y N 2003 Proc. VLSI Technol. 37 1.1
[4] Kim R Yand and Kim H G 2006 Appl. Phys. Lett. 89 102107
[5] Ovshinsky S R 1968 Phys. Rev. Lett. 21 1450
[6] Neale R and Nelson D 1970 Electronics 28 56
[7] Neale R 2001 Electron. Engin. 4 67
[8] Zhang T, Liu B, Song Z T, Liu W L, Feng S L and Chen B2005 Chin. Phys. Lett. 22 1803
[9] Liu B, Song Z T, Liu W L, Feng S L and Chen B 2005 Chin. Phys. Lett. 22 758
[10] Liu B, Song Z T, Liu W L, Feng S L and Chen B 2004 Chin. Phys. Lett. 21 2054
[11] Liu Q B, Zhang K L and Liu W L 2005 SEMI-ECSInternational Semiconductor Technology Conference (Shanghai) p 639
[12] Zhang K L, Song Z T and Feng S L 2005 SEMI-ECSInternational Semiconductor Technology Conference (Shanghai) p 630
[13] Liu Q B, Song Z T, Zhang K L, Wang L Y, Feng S L and ChenB 2006 Chin. Phys. Lett. 23 2296
[14] Zhang K L, Liu Q B, Song Z T, Feng S L and Chen B 2006 Eighth International Conference on Solid-State and IntegratedCircuit Technology (Shanghai) p 821
[15] Pirovano A, Lacaita A L and Benvenuti A 2003 IEDMTech. Dig. 699
Related articles from Frontiers Journals
[1] FENG Chong, TANG Zhen-An, YU Jun. A Novel CMOS Device Capable of Measuring Near-Field Thermal Radiation[J]. Chin. Phys. Lett., 2012, 29(3): 762-764
[2] WEI Rong-Shan, CHEN Jin-Feng, CHEN Shou-Chang, HE Ming-Hua. Reconfigurable Threshold Logic Element with SET and MOS Transistors[J]. Chin. Phys. Lett., 2012, 29(2): 762-764
[3] YANG Cheng, ZHANG Gang, LEE Dae-Young, LI Hua-Min, LIM Young-Dae, YOO Won Jong**, PARK Young-Jun, KIM Jong-Min . Self-Assembled Wire Arrays and ITO Contacts for Silicon Nanowire Solar Cell Applications[J]. Chin. Phys. Lett., 2011, 28(3): 762-764
[4] ZOU Yang, CAI Jie, WAN Ming-Zhen, LV Peng, GUAN Qing-Feng** . Formation Mechanism of Micropores on the Surface of Pure Aluminum Induced by High-Current Pulsed Electron Beam Irradiation[J]. Chin. Phys. Lett., 2011, 28(11): 762-764
[5] WANG Wei, HUANG Bei-Ju, DONG Zan, LIU Hai-Jun, ZHANG Xu, GUAN Ning, CHEN Jin, GUO Wei-Lian, NIU Ping-Juan, CHEN Hong-Da. A Low-Voltage Silicon Light Emitting Device in Standard Salicide CMOS Technology[J]. Chin. Phys. Lett., 2010, 27(4): 762-764
[6] LIU Xiao-Bing, JIA Xiao-Peng, MA Hong-An, HAN Wei, GUO Xin-Kai, JIA Hong-Sheng. HPHT Synthesis of High-Quality Diamond Single Crystals with Micron Grain Size[J]. Chin. Phys. Lett., 2009, 26(3): 762-764
[7] PEI Xiao-Jiang, GUO Li-Wei, WANG Xiao-Hui, WANG Yang, JIA Hai-Qiang, CHEN Hong, ZHOU Jun-Ming. Enhanced Photoluminescence of InGaN/GaN Green Light-Emitting Diodes Grown on Patterned Sapphire Substrate[J]. Chin. Phys. Lett., 2009, 26(2): 762-764
[8] HAO Mei-Lan, DAI Zhong-Ling, WANG You-Nian. Simulation of Dual Frequency Capacitive Sheath over a Concave Electrode in Low Pressure[J]. Chin. Phys. Lett., 2009, 26(12): 762-764
[9] LI Jian-Hua, YU Bo-Ming, ZOU Ming-Qing. A Model for Fractal Dimension of Rough Surfaces[J]. Chin. Phys. Lett., 2009, 26(11): 762-764
[10] GAO Hai-Yong, YAN Fa-Wang, FAN Zhong-Chao, LI Jin-Min, ZENG Yi-Ping, WANG Guo-Hong. Improved Light Extraction of GaN-based LEDs with Nano-roughened p-GaN Surfaces[J]. Chin. Phys. Lett., 2008, 25(9): 762-764
[11] ZHU Ji-Hong, ZHANG Shu-Ming, SUN Xian, ZHAO De-Gang, ZHU Jian-Jun, LIU Zong-Shun, JIANG De-Sheng, DUAN Li-Hong, WANG Hai, SHI Yong-Sheng, LIU Su-Ying, YANG Hui,. Fabrication and Optical Characterization of GaN-Based Nanopillar Light Emitting Diodes[J]. Chin. Phys. Lett., 2008, 25(9): 762-764
[12] XU Yi-Jun, YE Chao, HUANG Xiao-Jiang, YUAN Jing, XING Zhen-Yu, NINGZhao-Yuan. CHF3 Dual-Frequency Capacitively Coupled Plasma by Optical Emission Spectroscopy[J]. Chin. Phys. Lett., 2008, 25(8): 762-764
[13] ZHANG Li-Qing, ZHANG Chong-Hong, YANG Yi-Tao, YAO Cun-Feng, LI Bing-Sheng, JIN Yun-Fan, SUN You-Mei, SONG Shu-Jian. Surface Erosion of GaN Bombarded by Highly Charged 208Pbq+-Ions[J]. Chin. Phys. Lett., 2008, 25(7): 762-764
[14] CHEN Jie-Fei, XIAO Wen-Jia, LI Da, YANG Yang-Yi, HE Zhen-Hui,. Superhydrophobicity of LaMnO3 Coatings with Hierarchical Microstructures[J]. Chin. Phys. Lett., 2008, 25(2): 762-764
[15] LI Jun-Hong, WANG Cheng-Hao, XU Lian, XIE Shu. Pt/Ti Electrodes of PZT Thin Films Patterning by Novel Lift-Off Using ZnO as a Sacrificial Layer[J]. Chin. Phys. Lett., 2008, 25(1): 762-764
Viewed
Full text


Abstract