| Original Articles |
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Flexible Cu(In, Ga)Se2 Thin-Film Solar Cells on Polyimide Substrate by Low-Temperature Deposition Process |
| ZHANG Li;HE Qing;JIANG Wei-Long;LI Chang-Jian;SUN Yun |
| Key Laboratory of Opto-Electronic Information Science and Technology (Ministry of Education), Key Laboratory of Photo-Electronics Thin Film Devices and Techniques of Tianjin, Institute of Photo-Electronic Thin film Device and Technology, Nankai University, Tianjin 300071 |
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| Cite this article: |
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ZHANG Li, HE Qing, JIANG Wei-Long et al 2008 Chin. Phys. Lett. 25 734-736 |
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Abstract The electrical and structural properties of polycrystalline Cu(In,Ga)Se2 films grown on polyimide (PI) substrates below 400°C via one-stage and three-stage co-evaporation process have been investigated by x-ray diffraction spectra (XRD), scanning electron microscopy (SEM) and Hall effect measurement. As shown by XRD spectra, the stoichiometric CIGS films obtained by one-stage process exhibit the characteristic diffraction peaks of the (In0.68Ga0.32)2Se3 and Cu(In0.7Ga0.3)2Se. It is also found that the film
structures indicate more columnar and compact than the three-stage process films from SEM images. The stoichiometric CIGS films obtained by three-stage process exhibit the coexistence of the secondary phase of (In0.68Ga0.32)2Se3, Cu2-xSe and Cu(In0.7Ga0.3)2Se. High net carrier concentration and
sheet conductivity are also observed for this kind of film, related to the presence of Cu2-xSe phase. As a result, when the CIGS film growth temperature is below 400°C, the three-stage process is inefficient for solar cells. By using the one-stage co-evaporation process, the flexible CIGS solar cell on a PI substrate with the best conversion efficiency of 6.38% is
demonstrated (active area 0.16cm2).
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| Keywords:
81.05.Bx
68.55.Jk
81.15.Cd
84.60.Jt
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Received: 27 November 2007
Published: 30 January 2008
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