| Original Articles |
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Minority Carrier Lifetime in As-Grown Germanium Doped Czochralski Silicon |
| ZHU Xin;YANG De-Ren;LI Ming;CHEN Tao;WANG Lei;QUE Duan-Lin |
| State Key Laboratory of Silicon Materials and Department of Material Science and Engineering, Zhejiang University, Hangzhou 310027 |
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| Cite this article: |
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ZHU Xin, YANG De-Ren, LI Ming et al 2008 Chin. Phys. Lett. 25 651-653 |
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Abstract The minority carrier lifetime of as-grown germanium-doped Czochralski (GCZ) silicon wafers doped with germanium concentrations [Ge]=1016--1018cm-3 is
investigated in comparison with conventional CZ silicon samples. It is found that the lifetime distribution along the ingot changes with the variation of [Ge]. There is a critical value of [Ge] = 1016cm-3 beyond which Ge can obviously influence the lifetime of as-grown ingots. This phenomenon is considered to be associated with the competition or combination between the oxygen related thermal donors (TDs) and electrically active Ge-related
complexes. The related formation mechanisms and distributions are also discussed.
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| Keywords:
61.72.Cc
61.72.Yx
71.55.Cn
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Received: 11 October 2007
Published: 30 January 2008
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| PACS: |
61.72.Cc
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(Kinetics of defect formation and annealing)
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61.72.Yx
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(Interaction between different crystal defects; gettering effect)
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71.55.Cn
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(Elemental semiconductors)
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