Kinetics of Nitrogen Indiffusion in Czochralski Silicon Annealed in Nitrogen Ambient

Chin. Phys. Lett.

2008, Vol. 25

Issue (2): 648-650 DOI:

Original Articles

Kinetics of Nitrogen Indiffusion in Czochralski Silicon Annealed in Nitrogen Ambient

LI Ming;MA Xiang-Yang;YANG De-Ren

State Key Lab of Silicon Materials and Department of Material Science and Engineering, Zhejiang University, Hangzhou 310027

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LI Ming, MA Xiang-Yang, YANG De-Ren 2008 Chin. Phys. Lett. 25 648-650

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Abstract By means of low-temperature (10K) Fourier transform infrared absorption spectroscopy, the kinetics of nitrogen indiffusion in Czochralski (CZ) silicon annealed at 1150--1250°C in nitrogen ambient is investigated. Moreover, the nitrogen diffusivities in CZ silicon at elevated temperatures deduced herein are in good agreement with those previously obtained in float-zone silicon, thus leading to the conclusion that the nitrogen indiffusion in CZ silicon at elevated temperatures is via nitrogen pairs.

Keywords: 61.72.Cc 61.72.Ff 61.72.Yx

Received: 19 June 2007 Published: 30 January 2008

PACS:	61.72.Cc	(Kinetics of defect formation and annealing)
	61.72.Ff	(Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.))
	61.72.Yx	(Interaction between different crystal defects; gettering effect)

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	LI Ming
	MA Xiang-Yang
	YANG De-Ren

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