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Thermal Conductivity Measurement of Submicron-Thick Aluminium Oxide Thin Films by a Transient Thermo-Reflectance Technique |
BAI Su-Yuan1,2;TANG Zhen-An1;HUANG Zheng-Xing1;YU Jun1;WANG Jia-Qi1 |
1Department of Electronic Engineering, Dalian University of Technology, Dalian 1160242School of Physics and Electronic Technology, Liaoning Normal University, Dalian 116029 |
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Cite this article: |
BAI Su-Yuan, TANG Zhen-An, HUANG Zheng-Xing et al 2008 Chin. Phys. Lett. 25 593-596 |
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Abstract Thermal conductivity of submicron-thick aluminium oxide thin films prepared by middle frequency magnetron sputtering is measured using a transient thermo-reflectance technique. A three-layer model based on transmission line theory and the genetic algorithm optimization method are employed to obtain the thermal conductivity of thin films and the interfacial thermal resistance. The results show that the average thermal conductivity of 330--1000nm aluminium oxide thin films is 3.3Wm-1K-1 at room temperature. No significant thickness dependence is found. The uncertainty of the measurement is less than 10%.
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Keywords:
44.10.+i
66.70.-f
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Received: 27 September 2007
Published: 30 January 2008
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PACS: |
44.10.+i
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(Heat conduction)
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66.70.-f
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(Nonelectronic thermal conduction and heat-pulse propagation in solids;thermal waves)
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