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High Speed Signal Wavelength Conversion Using Stimulated Raman Effect in Ultrasmall Silicon-on-Insulator Optical Waveguides |
WU Jian-Wei1,2;LUO Feng-Guang1,2;GALLEP Cristiano de Mello3 |
1College of Optoelectronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 4300742Wuhan National Laboratory for Optoelectronics, Wuhan 4300743Telecommunication Technology Division/CESET, State University of Campinas, Limeira, SP, Brazil |
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Cite this article: |
WU Jian-Wei, LUO Feng-Guang, GALLEP Cristiano de Mello 2008 Chin. Phys. Lett. 25 574-577 |
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Abstract We propose the high speed signal wavelength conversion based on timulated Raman effect on silicon waveguides. Simulation results of non-return-to-zero (NRZ) pseudorandom bit sequence (27-1 code) at 500-Gb/s rate of conversion in an ultrasmall silicon-on-insulator (SOI) optical waveguide are presented by co-propagating pump optical field. The most attractive issue is that the inverted converted signal can be obtained at the same wavelength as that of primary signal. In addition, the conversion performances, including extinction ratio (ER) and average peak power of conversion signal, depend strongly on the launching pump intensity.
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Keywords:
42.82.-m
85.30.De
42.65.Re
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Received: 01 August 2007
Published: 30 January 2008
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PACS: |
42.82.-m
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(Integrated optics)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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42.65.Re
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(Ultrafast processes; optical pulse generation and pulse compression)
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[1]Tsang H K, Wong C S and Liang T K 2002 Appl. Phys.Lett. 80 416 [2] Rieger G W, Virk K S and Young J F 2004 Appl. Phys.Lett. 84 900 [3] Rong H, Jones R, Liu A et al 2005 Nature 433725 [4] Yin L, Lin Q and Agrawal G P 2006 Opt. Lett. 31 1295 [5] Culurciello E 2007 Electron. Lett. 43 418 [6] Rong H, Liu A, Jones R et al 2005 Nature 433292 [7] Liu A, Rong H, Paniccia M et al 2004 Opt. Express 12 4261 [8] Espinola R L, Dadap J I, Osgood R M et al 2004 Opt.Express 12 3713 [9] Gallep C M, Cavalcanti A L R, Ribeiro N et al 2006 Microwave Opt. Technol. Lett. 48 1141 [10] Dong J, Fu S, Zhang X et al 2006 IEEE Photon.Technol. Lett. 18 2554 [11] Simos H, Stamataki I, and Syvridis D 2007 IEEE J.Quantum. Electron. 43 370 [12] Andersen P A, Tokle T, Geng Y et al 2005 IEEEPhoton. Technol. Lett. 17 1908 [13] Yin L, and Agrawal G P 2007 Opt. Lett. 322031 [14] Espinola R L, Dadap J I, Osgood R M et al 2005 Opt.Express 13 4341 [15] Kuo Y, Rong H, Sih V et al 2006 Opt. Express 14 11721 [16] Yamada K, Fukuda H, Tsuchizawa T et al 2006 IEEEPhoton. Technol. Lett. 18 1046 [17] Liu Y, Hill M T, Tangdiongga E et al 2003 IEEEPhoton. Technol. Lett. 15 90 [18] Jalali B, Claps R, Dimitropoulos D et al 2004 TopicsAppl. Phys. 94 199 [19] Passaro V M N, Leonardis F D 2006 Opt. and QuantumElectron. 38 877 [20] Soref R A, and Bennett B R 1987 IEEE QuantumElectron. 23 123 [21] Claps R, Rahgunathan V, Dimitropoulos D et al 2004 Opt. Express 12 2774 [22] Dimitropoulos D, Raghunathan V, Claps R et al 2004 Opt. Express 12 149 [23] Liu A, Rong H, Jones R et al 2006 J. LightwaveTechnol. 24 1440 [24] Dimitropoulos D, Jhaveri R, Claps R et al 2005 Appl.Phys. Lett. 86 07115-1 [25] Dadap J I, Espinola R L, Osgood R M et al 2004 Opt.Lett. 29 2755 [26] Lin Q, Zhang J, Fauchet P M et al 2006 Opt. Express 14 4786 |
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