| Original Articles |
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Working Pressure Dependence of Properties of Al2O3 Thin Films Prepared by Electron Beam Evaporation |
| ZHAN Mei-Qiong1;WU Zhong-Lin1;FAN Zheng-xiu2 |
| 1Shanghai Second Polytechnic University, Shanghai 2012092Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 |
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| Cite this article: |
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ZHAN Mei-Qiong, WU Zhong-Lin, FAN Zheng-xiu 2008 Chin. Phys. Lett. 25 563-565 |
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Abstract The effects of working pressure on properties of Al2O3 thin films are investigated. Transmittance of the Al2O3 thin film is measured by a Lambda 900 spectrometer. Laser-induced damage threshold (LIDT) is measured by a
Nd:YAG laser at 355nm with a pulse width of 7ns. Microdefects were observed under a Nomarski microscope. The samples are characterized by optical properties and defect, as well as LIDT under the 355nm Nd:YAG laser radiation. It is found that the working pressure has fundamental effect on the LIDT. It is the absorption rather than the microdefect that plays an important role on the LIDT of Al2O3 thin film.
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| Keywords:
42.79.Wc
61.80.Ba
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Received: 01 November 2007
Published: 30 January 2008
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| PACS: |
42.79.Wc
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(Optical coatings)
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61.80.Ba
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(Ultraviolet, visible, and infrared radiation effects (including laser radiation))
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