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Photodetachment of H- near a Partially Reflecting Surface---I |
A. Afaq |
Department of Physics, COMSATS Institute of Information Technology Lahore, Pakistan |
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Cite this article: |
A. Afaq 2008 Chin. Phys. Lett. 25 475-478 |
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Abstract Theoretical and interpretative study on the subject of photodetachment of H- near a partially reflecting surface is presented, and the absorption effect of the surface is investigated on the total and differential cross sections using a theoretical imaging method. To understand the absorption effect, a reflection parameter K is introduced as a multiplicative factor to the outgoing detached-electron wave of H- propagating towards the wall. The reflection parameter measures, how much electron wave would reflect from the surface; K=0 corresponds to no reflection and K=1 corresponds to the total reflection.
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Keywords:
32.80.Gc
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Received: 17 September 2007
Published: 30 January 2008
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PACS: |
32.80.Gc
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(Photodetachment of atomic negative ions)
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