| Original Articles |
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Growth, Antimony Incorporation Behaviour and Beryllium Doping of GaAs1-ySby Grown on GaAs by Molecular Beam Epitaxy |
| GAO Han-Chao, WANG Wen-Xin, JIANG Zhong-Wei, LIU Jian, YANG Cheng-Liang, WU Dian-Zhong, ZHOU Jun-Ming, CHEN Hong |
| Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 |
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| Cite this article: |
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GAO Han-Chao, WANG Wen-Xin, JIANG Zhong-Wei et al 2008 Chin. Phys. Lett. 25 4466-4468 |
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Abstract A series of GaAs1-ySby epilayers are grown on GaAs substrates under different growth conditions. Different antimony compositions of samples with
beryllium doping are obtained. A non-equilibrium thermodynamics model is used to calibrate and fit the Sb composition. Activation energy of 0.37eV for the dissociation process of Sb4 molecules is obtained. Carrier mobility and concentration of samples are influenced by the Sb composition. Quasi-qualitative analysis of mobility is used to explain the relations among Sb composition, carrier mobility and concentration. High resolution x-ray diffraction (HRXRD) rocking curves and Hall effects measurements are used to determine the crystal quality, carrier mobility and concentration.
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| Keywords:
81.15.Hi
61.05.Cp
61.72.U-
61.72.Uj
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Received: 11 April 2008
Published: 27 November 2008
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| PACS: |
81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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61.05.cp
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(X-ray diffraction)
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61.72.U-
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(Doping and impurity implantation)
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61.72.uj
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(III-V and II-VI semiconductors)
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