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Optimized Performances of Thick Film Organic Lighting-Emitting Diodes |
WANG Xiu-Ru1, ZHANG Zhi-Qiang2, MA Dong-Ge2, SUN Run-Guang1 |
1School of Material Science and Engineering, Shanghai University, Jiading Campus, PO Box 815, Shanghai 2018002State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Graduate School of the Chinese Academy of Sciences, Chinese Academy of Sciences, Changchun 130022 |
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Cite this article: |
WANG Xiu-Ru, ZHANG Zhi-Qiang, MA Dong-Ge et al 2008 Chin. Phys. Lett. 25 4425-4427 |
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Abstract The performance of organic light-emitting diodes (OLEDs) with thick film is optimized. The alternative vanadium oxide (V2O5) and N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPB) layers are used to enhance holes in the emissive region, and 4,7-dipheny-1,10-phenanthroline (Bphen) doped 8-tris-hydroxyquinoline aluminium (Alq3) is used to enhance electrons in the emissive region, thus ITO/V2O5 (8nm)/NPB (52nm)/V2O5 (8nm)/NPB (52nm)/Alq3 (30 and 45nm)/Alq3:Bphen (30wt%, 30 and 45nm)/LiF (1nm)/Al (120nm) devices are fabricated. The thick-film devices show the turn-on voltage of about 3V and the maximal power efficiency of 4.5lm/W, which is 1.46 times higher than the conventional thin-film OLEDs.
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Keywords:
78.60.Fi
78.55.Kz
81.15.Ef
85.60.Jb
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Received: 27 May 2008
Published: 27 November 2008
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