Chin. Phys. Lett.  2008, Vol. 25 Issue (12): 4425-4427    DOI:
Original Articles |
Optimized Performances of Thick Film Organic Lighting-Emitting Diodes
WANG Xiu-Ru1, ZHANG Zhi-Qiang2, MA Dong-Ge2, SUN Run-Guang1
1School of Material Science and Engineering, Shanghai University, Jiading Campus, PO Box 815, Shanghai 2018002State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Graduate School of the Chinese Academy of Sciences, Chinese Academy of Sciences, Changchun 130022
Cite this article:   
WANG Xiu-Ru, ZHANG Zhi-Qiang, MA Dong-Ge et al  2008 Chin. Phys. Lett. 25 4425-4427
Download: PDF(455KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract

The performance of organic light-emitting diodes (OLEDs) with thick film is optimized. The alternative vanadium oxide (V2O5) and N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPB) layers are used to enhance holes in the emissive region, and 4,7-dipheny-1,10-phenanthroline (Bphen) doped 8-tris-hydroxyquinoline aluminium (Alq3) is used to enhance electrons in the emissive region, thus ITO/V2O5 (8nm)/NPB (52nm)/V2O5 (8nm)/NPB (52nm)/Alq3 (30 and 45nm)/Alq3:Bphen (30wt%, 30 and 45nm)/LiF (1nm)/Al (120nm) devices are fabricated. The thick-film devices show the turn-on voltage of about 3V and the maximal power efficiency of 4.5lm/W, which is 1.46 times higher than the conventional thin-film OLEDs.

Keywords: 78.60.Fi      78.55.Kz      81.15.Ef      85.60.Jb     
Received: 27 May 2008      Published: 27 November 2008
PACS:  78.60.Fi (Electroluminescence)  
  78.55.Kz (Solid organic materials)  
  81.15.Ef  
  85.60.Jb (Light-emitting devices)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2008/V25/I12/04425
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
WANG Xiu-Ru
ZHANG Zhi-Qiang
MA Dong-Ge
SUN Run-Guang
[1] Walzer K, Maennig B, Pfeiffer M and Leo K 2007 Chem.Rev. 107 1233
[2] Zhu X L, Sun J X, Peng H J, Meng Z G, Wong M and Kwoka H S2005 Appl. Phys. Lett. 87 153508-1
[3] Chen T-H, Liou Y, Wu T J and Chen J Y 2005 Appl.Phys. Lett. 87 243510-1
[4] Reynolds K J, Barker J A, Greenham N C, Friend R H andFrey G L 2002 J. Appl. Phys. 92 7556
[5] Hung L S, Tang C W and Mason M G 1997 Appl. Phys.Lett. 70 152
[6] Huang J S, Li G, Wu E, Xu Q F and Yang Y 2006 Adv.Mater. 18 114
[7] Huang J S, Pfeiffer M, Werner A, Blochwitz J, Leo K andLiu Y S 2002 Appl. Phys. Lett. 80 139
[8] Zhou X, Pfeiffer M, Huang J S, Blochwitz-Nimoth J, Qin DS, Werner A and Drechsel J 2002 Appl. Phys. Lett. 81 922
[9] Matsumoto T, Nakada T, Endo J, Mori K, Kawamura N, Yokoi Aand Kido J 2003 SID 03 DIGEST 27.5L p 979
[10] Wang F X, Qiao X F, Xiong T and Ma D G 2008 Org.Electron. (in press)
Related articles from Frontiers Journals
[1] ZENG Chang, ZHANG Shu-Ming**, WANG Hui, LIU Jian-Ping, WANG Huai-Bing, LI Zeng-Cheng, FENG Mei-Xin, ZHAO De-Gang, LIU Zong-Shun, JIANG De-Sheng, YANG Hui. Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN[J]. Chin. Phys. Lett., 2012, 29(1): 4425-4427
[2] DAI Ke-Hui, **, WANG Lian-Shan**, HUANG De-Xiu, SOH Chew-Beng, CHUA Soo-Jin, . Influence of Size of ZnO Nanorods on Light Extraction Enhancement of GaN-Based Light-Emitting Diodes[J]. Chin. Phys. Lett., 2011, 28(9): 4425-4427
[3] YIN Yang, RAN Guang-Zhao**, ZHANG Bin, QIN Guo-Gang** . Photo- and Electro-Luminescence at 1.54µm from Er3+ in SiC:Er2O3 Films and Structures[J]. Chin. Phys. Lett., 2011, 28(7): 4425-4427
[4] XU Cheng, **, XU Lin-Min, ZHANG Han-Zhuo, QIANG Ying-Huai, ZHU Ya-Bo, LIU Jiong-Tian, SHAO Jian-Da . Comparative Studies on the Laser Damage Resistance of Ta2O5 and Nb2O5 Films Performed under Different Electron Beam Currents[J]. Chin. Phys. Lett., 2011, 28(6): 4425-4427
[5] WU Meng, **, ZENG Yi-Ping, , WANG Jun-Xi, HU Qiang . Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate[J]. Chin. Phys. Lett., 2011, 28(6): 4425-4427
[6] LIAN Jia-Rong**, NIU Fang-Fang, LIU Ya-Wei, ZENG Peng-Ju . Improved Hole-Blocking and Electron Injection Using a TPBI Interlayer at the Cathode Interface of OLEDs[J]. Chin. Phys. Lett., 2011, 28(4): 4425-4427
[7] CHEN Jun, FAN Guang-Han**, PANG-Wei, ZHENG Shu-Wen . Comparison of GaN-Based Light-Emitting Diodes by Using the AlGaN Electron-Blocking Layer and InAlN Electron-Blocking Layer[J]. Chin. Phys. Lett., 2011, 28(12): 4425-4427
[8] WANG Jia-Xing, WANG Lai**, HAO Zhi-Biao, LUO Yi . Efficiency Droop Effect Mechanism in an InGaN/GaN Blue MQW LED[J]. Chin. Phys. Lett., 2011, 28(11): 4425-4427
[9] FENG Lie-Feng**, LI Yang, LI Ding, WANG Cun-Da, ZHANG Guo-Yi, YAO Dong-Sheng, LIU Wei-Fang, XING Peng-Fei . Frequency Response of Modulated Electroluminescence of Light-Emitting Diodes[J]. Chin. Phys. Lett., 2011, 28(10): 4425-4427
[10] LIANG Chun-Jun, ZOU Hui, HE Zhi-Qun, ZHANG Chun-Xiu, LI Dan, WANG Yong-Sheng. Polymer Light-Emitting Diode Using Conductive Polymer as the Anode Layer[J]. Chin. Phys. Lett., 2010, 27(9): 4425-4427
[11] DU Xiao-Zhang, LU Hai, CHEN Dun-Jun, XIU Xiang-Qian, ZHANG Rong, ZHENG You-Dou. UV Light-Emitting Diodes at 340nm Fabricated on a Bulk GaN Substrate[J]. Chin. Phys. Lett., 2010, 27(8): 4425-4427
[12] QIAO Xian-Feng, CHEN Jiang-Shan, MA Dong-Ge. Comparative Study on Hole Transport in N,N'-bis(naphthalen-1-yl)-N,N'- bis(pheny) Benzidine and 4,4',4''-tri(N-carbazolyl)triphenylamine[J]. Chin. Phys. Lett., 2010, 27(8): 4425-4427
[13] N. J. Suthan Kissinger, G. Gnana Kumar, K. Perumal, J. Suthagar. Spectral Response and Photoelectrochemical Properties of Cd1-xZnxSe Films[J]. Chin. Phys. Lett., 2010, 27(5): 4425-4427
[14] WANG Wei, HUANG Bei-Ju, DONG Zan, LIU Hai-Jun, ZHANG Xu, GUAN Ning, CHEN Jin, GUO Wei-Lian, NIU Ping-Juan, CHEN Hong-Da. A Low-Voltage Silicon Light Emitting Device in Standard Salicide CMOS Technology[J]. Chin. Phys. Lett., 2010, 27(4): 4425-4427
[15] LEI Tong, WANG Xiao-Ping, WANG Li-Jun, LV Cheng-Rui, ZHANG Shi, ZHU Yu-Zhuan. Electroluminescence from Multilayered Diamond/CeF3/SiO2 Films[J]. Chin. Phys. Lett., 2010, 27(4): 4425-4427
Viewed
Full text


Abstract