Chin. Phys. Lett.  2008, Vol. 25 Issue (12): 4395-4398    DOI:
Original Articles |
Effective-Medium Approach for Conductivities in Multi-Component Granular Mixtures
LI Ning, ZHANG Yong-You, JIN Guo-Jun
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
Cite this article:   
LI Ning, ZHANG Yong-You, JIN Guo-Jun 2008 Chin. Phys. Lett. 25 4395-4398
Download: PDF(339KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract

We apply the effective-medium theory to a multi-component mixture system, by which the effective longitudinal and Hall conductivities can be calculated. We find that there is more than one threshold in the multi-component mixture, and the maximum number of thresholds is one less than the component number. Further, the thresholds are mainly dependent on the relative volume ratio of the components when the conductivity ratios between any two components are far larger or smaller than one.

Keywords: 74.25.Ha      73.40.Qv      72.80.Ng     
Received: 02 September 2008      Published: 27 November 2008
PACS:  74.25.Ha (Magnetic properties including vortex structures and related phenomena)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  72.80.Ng (Disordered solids)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2008/V25/I12/04395
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
LI Ning
ZHANG Yong-You
JIN Guo-Jun
[1] Isichenko M B 1992 Rev. Mod. Phys. 64 961
[2]Heussinger C, Schaefer B and Frey E 2007 Phys. Rev. E 76 031906
[3]Bai B, Svirko Y, Turunen J and Vallius T 2007 Phys.Rev. A 76 023811
[4]Hilton D J,Prasankumar R P, Fourmaux S, Cavalleri A,Brassard D, El Khakani M A, Kieffer J C, Taylor A J and Averitt R D2007 Phys. Rev. Lett. 99 226401.
[5]Wang J G, Shao J D and Fan Z X 2005 Chin. Phys. Lett. 22 233
[6]Kim K H, Uehara M, Hess C, Sharma P A and Cheong S W 2000 Phys. Rev. Lett. 84 2961
[7]Bastea S 2007 Phys. Rev. E 75 031201
[8]Magier R and Bergman D J 2008 Phys. Rev. B 77144406
[9]Bergman D J and Stroud D G 2000 Phys. Rev. B 626603
[10]Wen F S, Qiao L, Yi H B, Zhou D and Li F S 2008 Chin. Phys. Lett. 25 751
[11]Wei E B and Gu G Q 2001 Chin. Phys. Lett. 18960
[12] Halley J W, Holcomb W K and Goetz K 1980 Phys. Rev.B 21 4840
[13]Johner N, Grimaldi C,Balberg I and Ryser P 2008 Phys.Rev. B 77 174204
[14]Cohen M H and Jortner J 1973 Phys. Rev. Lett. 30 696
[15]Landauer R 1952 J. Appl. Phys. 23 779
Related articles from Frontiers Journals
[1] HUANG Xiao-Ming, WU Chen-Fei, LU Hai, XU Qing-Yu, ZHANG Rong, ZHENG You-Dou. Impact of Interfacial Trap Density of States on the Stability of Amorphous InGaZnO-Based Thin-Film Transistors[J]. Chin. Phys. Lett., 2012, 29(6): 4395-4398
[2] KONG Yue-Chan**,XUE Fang-Shi,ZHOU Jian-Jun,LI Liang,CHEN Chen,JIANG Wen-Hai. A Substitution for the High-k Dielectric in an AlGaN/GaN Metal-insulator-Semiconductor Heterostructure[J]. Chin. Phys. Lett., 2012, 29(5): 4395-4398
[3] XUE Bai-Qing,CHANG Hu-Dong,SUN Bing,WANG Sheng-Kai,LIU Hong-Gang**. The Impact of HCl Precleaning and Sulfur Passivation on the Al2O3/Ge Interface in Ge Metal-Oxide-Semiconductor Capacitors[J]. Chin. Phys. Lett., 2012, 29(4): 4395-4398
[4] ZHANG Chao, SONG Zhi-Tang, WU Guan-Ping, LIU Bo, WANG Lian-Hong, XU Jia, LIU Yan, WANG Lei, YANG Zuo-Ya, FENG Song-Lin. An Integrated Phase Change Memory Cell with Dual Trench Epitaxial Diode Selector[J]. Chin. Phys. Lett., 2012, 29(3): 4395-4398
[5] LI Qi, WANG Wei-Dong, LIU Yun, WEI Xue-Ming. Improving Breakdown Behavior by Substrate Bias in a Novel Double Epi-layer Lateral Double Diffused MOS Transistor[J]. Chin. Phys. Lett., 2012, 29(2): 4395-4398
[6] BI Zhi-Wei, HAO Yue, FENG Qian, GAO Zhi-Yuan, ZHANG Jin-Cheng, MAO Wei, ZHANG Kai, MA Xiao-Hua, LIU Hong-Xia, YANG Lin-An, MEI Nan, CHANG Yong-Ming. AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al2O3 Laminated Dielectric by Atomic Layer Deposition[J]. Chin. Phys. Lett., 2012, 29(2): 4395-4398
[7] ZHANG Xiao-Dong, FAN Guo-Zhi, ZHANG Cheng-Lin, JING Xiu-Nian, LUO Jian-Lin**. 75As Nuclear Magnetic Resonance Studies on Ba(Fe1−xNix)2As2 Single Crystals under High Pressure[J]. Chin. Phys. Lett., 2012, 29(1): 4395-4398
[8] LI Yu-Hong, **, XU Chun-Ping, GAO Chao, WANG Zhi-Guang . Ne2+ Ion Irradiation Induced Swelling Effects in Pyrochlore Ho2Ti2O7 by Using a GIXRD Technique[J]. Chin. Phys. Lett., 2011, 28(6): 4395-4398
[9] CAO Chao**, DAI Jian-Hui, ** . Electronic Structure of KFe2Se2 from First-Principles Calculations[J]. Chin. Phys. Lett., 2011, 28(5): 4395-4398
[10] ZHOU Bin, WANG Jin-Yan**, MENG Di, LIN Shu-Xun, FANG Min, DONG Zhi-Hua, YU Min, HAO Yi-Long, Cheng P. WEN . A High Breakdown Voltage AlGaN/GaN MOSHEMT Using Thermal Oxidized Al-Ti as the Gate Insulator[J]. Chin. Phys. Lett., 2011, 28(10): 4395-4398
[11] JI Xiao-Li, LIAO Yi-Ming, YAN Feng**, SHI Yi, ZHANG Guan, GUO Qiang . Direct Experimental Evidence of Hole Trapping in Negative Bias Temperature Instability[J]. Chin. Phys. Lett., 2011, 28(10): 4395-4398
[12] CAO Yan-Rong**, MA Xiao-Hua, HAO Yue, ZHU Min-Bo, TIAN Wen-Chao, ZHANG Yue . Negative Bias Temperature Instability[J]. Chin. Phys. Lett., 2011, 28(1): 4395-4398
[13] XU Yue, YAN Feng, CHEN Dun-Jun, SHI Yi, WANG Yong-Gang, LI Zhi-Guo, YANG Fan, WANG Jos-Hua, LIN Peter, CHANG Jian-Guang. Improved Programming Efficiency through Additional Boron Implantation at the Active Area Edge in 90nm Localized Charge-Trapping Non-volatile Memory[J]. Chin. Phys. Lett., 2010, 27(6): 4395-4398
[14] GUO Yu-Feng, WANG Zhi-Gong, SHEU Gene, CHENG Jian-Bing. A High Performance Silicon-on-Insulator LDMOSTT Using Linearly Increasing Thickness Techniques[J]. Chin. Phys. Lett., 2010, 27(6): 4395-4398
[15] MA Xiao-Hua, GAO Hai-Xia, CAO Yan-Rong, CHEN Hai-Feng, HAO Yue. The Anomalous Effect of Interface Traps on Generation Current in Lightly Doped Drain nMOSFET's [J]. Chin. Phys. Lett., 2010, 27(5): 4395-4398
Viewed
Full text


Abstract