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Effect of Nitridation on Morphology, Structural Properties and Stress of AlN Films |
| HU Wei-Guo, JIAO Chun-Mei, WEI Hong-Yuan, ZHANG Pan-Feng, KANG Ting-Ting, ZHANG Ri-Qing, LIU Xiang-Lin |
| Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Cite this article: |
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HU Wei-Guo, JIAO Chun-Mei, WEI Hong-Yuan et al 2008 Chin. Phys. Lett. 25 4364-4367 |
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Abstract We investigate effects of nitridation on AlN morphology, structural properties and stress. It is found that 3min nitridation can prominently improve AlN crystal structure, and slightly smooth the surface morphology. However, 10min nitridation degrades out-of-plane crystal structure and surface morphology instead. Additionally, 3-min nitridation introduces more tensile stress (1.5GPa) in AlN films, which can be attributed to the weaker islands 2D coalescent. Nitridation for 10min can introduce more defects, or even forms polycrystallinity interlayer, which relaxes the stress. Thus, the stress in AlN with 10min nitridation decreases to -0.2GPa compressive stress.
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| Keywords:
68.55.-a
81.15.Kk
81.05.Ea
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Received: 04 August 2008
Published: 27 November 2008
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| PACS: |
68.55.-a
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(Thin film structure and morphology)
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81.15.Kk
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(Vapor phase epitaxy; growth from vapor phase)
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81.05.Ea
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(III-V semiconductors)
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